LF398N/NOPB National Semiconductor, LF398N/NOPB Datasheet - Page 2

• Manufacturer Part Number: LF398N/NOPB
• Description: IC AMP MONO SAMPLE & HOLD 8-DIP
• Manufacturer: National Semiconductor

Specifications of LF398N/NOPB

• Amplifier Type: Sample and Hold
• Number Of Circuits: 1
• Current - Input Bias: 10nA
• Voltage - Input Offset: 2000µV
• Current - Supply: 4.5mA
• Voltage - Supply, Single/dual (±): ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Current, Input Bias: 10 nA
• Current, Supply: 4.5 mA
• Impedance, Thermal: 115 °C/W
• Package Type: MDIP-8
• Power Dissipation: 500 mW
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Input: ±18 V
• Voltage, Input Offset: 2 mV
• Voltage, Supply: ±5 to ±18 V
• Acquisition Time: 4 us
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Supply Voltage (max): 18 V
• Supply Voltage (min): 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Slew Rate: -
• Gain Bandwidth Product: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LF398N; *LF398N/NOPB; LF398; LF398N; LF398N/NOPB/NOPB

Obsolete Versions
General Description
The LF198/LF298/LF398 are monolithic sample-and-hold circuits which utilize BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate.
Operating as a unity gain follower, dc gain accuracy is 0.002% typical and acquisition time is as low as 6 µs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide
bandwidth. Input offset adjust is accomplished with a single pin, and does not degrade input offset drift. The wide bandwidth allows the LF198 to be included inside the feedback loop of 1
MHz op amps without having stability problems. Input impedance of 10
P-channel junction FET's are combined with bipolar devices in the output amplifier to give droop rates as low as 5 mV/min with a 1 µF hold capacitor. The JFET's have much lower noise
than MOS devices used in previous designs and do not exhibit high temperature instabilities. The overall design guarantees no feed-through from input to output in the hold mode, even for
input signals equal to the supply voltages.
Reliability Metrics
Note: The Early Failure Rates were calculated as point estimates. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy
and derating the assumed stress temperature of 150°C to an application temperature of 55°C.
LF398N
LF398AH
LF398H
LF398 MDC
LF398 MWC
LF398 MDC
LF398 MWC
LF398AH
LF398AN
LF398H
LF398M
LF398MX
LF398N
LF398AH
Part Number
Obsolete Part
TO-99
TO-99
MDIP
BIFET
BIFET
BIFET
BIFET
BIFET
BIFET
BIFET
BIFET
Process
LF198AH
8
8
8
0
0
0
0
0
0
0
0
NOPB
NOPB
NOPB
STD
STD
Unpackaged Die
EFR Reject
Alternate Part or Supplier
Wafer
1
1
1
1
1
NA
NA
NA
NA
NA
12335
12335
12335
12335
12335
12335
12335
12335
EFR Sample Size
RoHS
RoHS
RoHS
10
Ohm allows high source impedances to be used without degrading accuracy.
N/A
N/A
N/A
NSC
8 weeks
6 weeks
6 weeks
Source
Full production
Full production
0
0
0
0
0
0
0
0
N/A
N/A
Obsolete
Obsolete
Custom
PPM *
40000
1000
1000
1000
N/A
12/03/2008
0
0
0
0
0
0
0
0
LTA Rejects
N/A
N/A
N/A
N/A
N/A
Last Time Buy Date
975000
975000
975000
975000
975000
975000
975000
975000
LTA Device Hours
wafer jar
4
4
4
4
4
4
4
4
box
500
box
500
tray
N/A
N/A
rail
FITS
40
of
of
of
of
of
NSZXYTTE# LF398AH
276658912
276658912
276658912
276658912
276658912
276658912
276658912
276658912
NSZXYTTE# LF398H
MTTF (Hours)
NSUZXYTT
398N
LF
-
-