LF442CN/NOPB National Semiconductor, LF442CN/NOPB Datasheet - Page 3

• Manufacturer Part Number: LF442CN/NOPB
• Description: IC OP AMP DUAL LO PWR JFET 8-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of LF442CN/NOPB

• Amplifier Type: J-FET
• Number Of Circuits: 2
• Slew Rate: 1 V/µs
• Gain Bandwidth Product: 1MHz
• Current - Input Bias: 10pA
• Voltage - Input Offset: 1000µV
• Current - Supply: 400µA
• Voltage - Supply, Single/dual (±): 10 V ~ 36 V, ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Bandwidth: 1 MHz
• Channel Separation: -120
• Common Mode Rejection Ratio: 95
• Current, Input Bias: 10 pA
• Current, Input Offset: 5 pA
• Current, Output: 6.8 mA
• Current, Supply: 400 μA
• Impedance, Thermal: 152 °C/W
• Number Of Amplifiers: Dual
• Package Type: MDIP-8
• Resistance, Input: 10^12 Ohms
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 200 V/mV
• Voltage, Input: 6 to 44 V
• Voltage, Noise: 35 nV/sqrt Hz
• Voltage, Offset: 1 mV
• Voltage, Output, High: 13 V
• Voltage, Output, Low: -13 V
• Voltage, Supply: ±15 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LF442CN; *LF442CN/NOPB; LF442; LF442CN

SR
GBW
e
i
Symbol
n
n
AC Electrical Characteristics
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 3: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 4: The value given is in 400 linear feet/min air flow.
Note 5: The value given is in static air.
Note 6: These devices are available in both the commercial temperature range 0˚C ≤ T
temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M”
indicates the military temperature range. The military temperature range is available in “H” package only.
Note 7: Unless otherwise specified, the specifications apply over the full temperature range and for V
V
Note 8: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
recommended if input bias current is to be kept to a minimum.
Note 9: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
Note 10: Refer to RETS442X for LF442MH military specifications.
Simplified Schematic
±
OS
15V to
, I
B
, and I
±
5V for the LF442 and
Amplifier to Amplifier
Coupling
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
OS
are measured at V
Parameter
±
20V to
CM
= 0.
±
5V for the LF442A.
T
(Input Referred)
V
V
T
f = 1 kHz
T
A
A
A
S
S
= 25˚C, f = 1 Hz-20 kHz
= 25˚C, R
= 25˚C, f = 1 kHz
=
=
±
±
D
15V, T
15V, T
. T
j
Conditions
= T
(Note 7)
S
A
A
A
+ θ
= 100Ω,
= 25˚C
= 25˚C
jA
P
D
1/2 Dual
where θ
3
jA
is the thermal resistance from junction to ambient. Use of a heat sink is
A
≤ 70˚C and the military temperature range −55˚C ≤ T
Min
0.8
0.8
LF442A
S
−120
0.01
Typ
35
=
1
1
±
20V for the LF442A and for V
00915503
Max
Min
0.6
0.6
LF442
−120
0.01
Typ
35
1
1
S
=
±
15V for the LF442.
Max
j
A
. Due to limited
www.national.com
≤ 125˚C. The
Units
V/µs
MHz
dB