TL082CD STMicroelectronics, TL082CD Datasheet - Page 5

IC OP AMP JFET DUAL GP 8-SOIC

TL082CD

Manufacturer Part Number
TL082CD
Description
IC OP AMP JFET DUAL GP 8-SOIC
Manufacturer
STMicroelectronics
Datasheets

Specifications of TL082CD

Amplifier Type
J-FET
Number Of Circuits
2
Slew Rate
16 V/µs
Gain Bandwidth Product
4MHz
Current - Input Bias
20pA
Voltage - Input Offset
3000µV
Current - Supply
1.4mA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
6 V ~ 36 V, ±3 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Channels
2
Common Mode Rejection Ratio (min)
70 dB
Input Offset Voltage
10 mV
Input Bias Current (max)
400 pA
Supply Current
2.5 mA
Maximum Power Dissipation
680 mW
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Dual Supply Voltage
+/- 5 V, +/- 9 V, +/- 12 V, +/- 15 V
Maximum Dual Supply Voltage
+/- 18 V
Minimum Dual Supply Voltage
+/- 3 V
Mounting Style
SMD/SMT
Shutdown
No
Technology
BiFET
Voltage Gain Db
106.02 dB
Bandwidth
4 MHz
Channel Separation
120
Common Mode Rejection Ratio
86
Current, Input Bias
20 pA
Current, Input Offset
5 pA
Current, Output
20 mA
Current, Supply
1.4 mA
Harmonic Distortion
0.01 %
Number Of Amplifiers
Dual
Package Type
SO-8
Power Dissipation
680 mW
Resistance, Input
10^12 Ohms
Signal Gain
200 V/mV
Temperature, Operating, Range
0 to +70 °C
Time, Rise
0.1 μs
Voltage, Input
±15 V
Voltage, Noise
15 nV/sqrt Hz
Voltage, Offset
3 mV
Voltage, Supply
6 to 36 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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TL082 TL082A TL082B
Table 3.
1. The input bias currents are junction leakage currents which approximately double for every 10° C increase in the junction
Symbol
V
GBP
THD
o1
temperature.
∅m
K
e
R
t
/V
ov
r
n
i
o2
Rise time
Overshoot
Gain bandwidth product
Input resistance
Total harmonic distortion
Equivalent input noise voltage
Phase margin
Channel separation
V
V
V
F=1kHz, R
R
A
V
v
in
in
in
S
CC
= 100
= 20mV, R
= 20mV, R
= 10mV, R
= 100Ω, F = 1kHz
= ±15V, T
L
= 2kΩ ,C
L
L
L
= 2kΩ , C
= 2kΩ , C
= 2kΩ , C
amb
Parameter
L
= +25°C (unless otherwise specified) (continued)
=100pF, A
L
L
L
= 100pF, unity gain
= 100pF, unity gain
= 100pF, F= 100kHz
v
=20dB, V
o
=2V
pp
Min.
TL082I,AC,AI,BC,
2.5
Typ. Max. Min.
10
0.01
120
0.1
10
15
45
BI
4
12
Electrical characteristics
2.5
TL082C
Typ. Max.
10
0.01
120
0.1
10
15
45
4
12
degrees
MHz
Unit
----------- -
dB
µs
nV
%
%
Ω
Hz
5/17

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