BD45365G-TR Rohm Semiconductor, BD45365G-TR Datasheet - Page 2

• Manufacturer Part Number: BD45365G-TR
• Description: IC DETECTOR VOLT 3.6V TMR 5SSOP
• Manufacturer: Rohm Semiconductor
• Type: Simple Reset/Power-On Resetr

Specifications of BD45365G-TR

• Number Of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 45 ms Minimum
• Voltage - Threshold: 3.6V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 5-SSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

 Absolute maximum ratings (Ta=25°C)
 Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
© 2009 ROHM Co., Ltd. All rights reserved.
BD45□□□G, BD46□□□G series
Detection Voltage
Detection Voltage
Temperature coefficient
Hysteresis Voltage
‘High’ Output
Delay time
Circuit Current
when ON
Circuit Current
when OFF
Operating Voltage Range
‘High’ Output Current
‘Low’Output Current (Nch)
Leak Current when OFF
ER Pin ‘H’ Voltage
ER Pin ‘L’ Voltage
ER Pin Input Current
Power Supply Voltage
Output Voltage
ER pin Voltage
Power Dissipation
Operating Temperature
Ambient Storage Temperature
www.rohm.com
V
R
C
*1
*2 t
*3 t
Attention: Please connect the GND when you don’t use ‘ER’
*1 Use above Ta=25°C results in a 5.4mW loss per degree.
*2 When mounted on a 70mm×70mm×1.6mm glass epoxy board.
DET
L
L
:Pull-up resistor to be connected between V
:Capacitor to be connected between V
PLH
PLH
Guarantee is Ta=25°C.
(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
:V
:V
Parameter
DD
DD
=(V
=Please set up the rise up time between V
DET
(T)-0.5V)(V
Parameter
Nch Open Drain Output
CMOS Output
DET
(T)+0.5V)
Symbol
∆V
V
V
V
Ileak
I
I
t
V
V
I
DD
DD
I
DET
∆T
PLH
I
OUT
DET
OPL
OH
OL
EL
EH
DET
EL
1
2
/
and GND.
OUT
V
-40°C~+105°C
V
C
R
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
*1 *2
and power supply.
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
OL
OL
DS
DS
DS
DD
L
L
=100pF,
=100kΩ
DD
≤0.4V, R
≤0.4V, R
=0.5V, V
=0.5V, V
=HL, R
＝LHL, R
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=0.5V,V
=V
=0V
DET
DET
DET
DET
DET
DET
DET
DET
DET
DET
DET
DET
DS
=10V
-0.2V, V
-0.2V, V
-0.2V, V
-0.2V, V
-0.2V, V
-0.2V, V
+0.2V, V
+0.2V, V
+0.2V, V
+0.2V, V
+0.2V, V
+0.2V, V
VDD-GND
DET
DD
Symbol
L
L
DD
DD
*1, *2, *3
VOUT
L
=470kΩ, Ta=25~105°C
=470kΩ, Ta=-40~25°C
VCT
Topr
Tstg
=470kΩ
Pd
=6.0V,V
=1.2V
=2.4V V
more than 100µs.
L
ER
ER
ER
ER
ER
ER
=470kΩ
ER
ER
ER
ER
ER
ER
Condition
=0V V
=0V V
=0V V
=0V V
=0V V
=0V V
BD4XXX5G
BD4XXX1G
BD4XXX2G
=0V V
=0V V
=0V V
=0V V
=0V V
=0V V
DET
2/9
DET
≥4.3V
=2.7V~4.8V
DET
DET
DET
DET
DET
DET
DET
DET
DET
DET
DET
DET
=2.3V~3.1V
=2.3V~3.1V
=3.2V~4.2V
=3.2V~4.2V
=4.3V~4.8V
=4.3V~4.8V
=2.3V~3.1V
=2.3V~3.1V
=3.2V~4.2V
=3.2V~4.2V
=4.3V~4.8V
=4.3V~4.8V
GND-0.3 ~ VDD+0.3
GND-0.3 ~ VDD+0.3
GND-0.3 ~ +10
-40 ~ +105
-55 ~ +125
-0.3 ~ +10
Limits
540
*1
*1
*1
*1
*1
*1
*1
*1
*1
*1
V
V
×0.99
×0.03
DET
DET
Min.
0.95
1.20
180
0.4
2.0
2.0
1.2
45
90
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(T)
(T)
V
V
×0.05
±100
Limit
DET
DET
0.70
0.70
0.75
0.75
0.80
0.80
0.75
0.75
0.80
0.80
0.85
0.85
Unit
Typ.
mW
100
200
2.7
1.2
5.0
°C
°C
50
V
V
V
1
-
-
-
-
-
(T)
(T)
Technical Note
2009.05 - Rev.C
V
V
×1.01
×0.08
Max.
DET
±360
DET
2.10
2.85
2.25
3.00
2.40
3.15
2.25
4.28
2.40
4.50
2.55
4.73
110
220
0.1
0.8
55
10
-
-
-
-
-
-
(T)
(T)
ppm/°C
Unit
mA
mA
ms
µA
µA
µA
µA
V
V
V
V
V