BA00JC5WT Rohm Semiconductor, BA00JC5WT Datasheet - Page 8

• Manufacturer Part Number: BA00JC5WT
• Description: IC REG LDO 1.5A VAR TO220FP
• Manufacturer: Rohm Semiconductor

Specifications of BA00JC5WT

• Regulator Topology: Positive Adjustable
• Voltage - Output: 1.5 ~ 12 V
• Voltage - Input: 3 ~ 16 V
• Voltage - Dropout (typical): 0.3V @ 200mA
• Number Of Regulators: 1
• Current - Output: 1.5A (Max)
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 16 V
• Output Voltage: 1.5 V to 12 V
• Output Type: Adjustable
• Dropout Voltage (max): 0.5 V at 500 mA
• Output Current: 1.5 A
• Line Regulation: 60 mV
• Load Regulation: 60 mV
• Voltage Regulation Accuracy: 1 %
• Maximum Power Dissipation: 2 W
• Maximum Operating Temperature: + 105 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Details

Notes for use
© 2011 ROHM Co., Ltd. All rights reserved.
BA□□JC5 Series,BA00JC5WT
www.rohm.com
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10. Overcurrent Protection Circuit
11. Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins in
Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit.
If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such
as fuses.
GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting
it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an
antistatic measure. Use similar precaution when transporting or storing the IC.
Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated.P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should
Ground Wiring Pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is
designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its operation.
Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this
circuit is assumed.
An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents.
Continued use of the protection circuits should be avoided. Please note that the current increases negatively impact the temperature.
applications. (I.e. Vcc is shorted with the GND pin while an external capacitor is charged.) Use a maximum capacitance
of 1000μF for the output pins. Inserting a diode to prevent back-current flow in series with Vcc or bypass diodes
between Vcc and each pin is recommended.
Back current prevention diode
Fig. 21 Bypass Diode
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Bypass Diode
VCC
Output pin
（Pin A）
（端子 A）
P substrate
P 基板
N
P
＋
Resistor
抵抗
Fig. 22 Example of Simple Bipolar IC Architecture
N
P
GND
Parasitic element
8/10
寄生素子
P
＋
N
（端子 B）
（Pin B）
Parasitic element
N
P
＋
C
Transistor (NPN)
トランジスタ(NPN)
B
Ｎ
N
N
E
P substrate
Ｐ
P
GND
P 基板
N
P
＋
Ｎ
N
(Pin B)
GND
(Pin A)
Technical Note
2011.02 - Rev.B
GND
B
E
C
GND
Parasitic element
Parasitic elements or
transistors