CM1213-06MR ON Semiconductor, CM1213-06MR Datasheet - Page 5

• Manufacturer Part Number: CM1213-06MR
• Description: TVS ARRAY ESD PROT LOW 6CH 8MSOP
• Manufacturer: ON Semiconductor

Specifications of CM1213-06MR

• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 6V
• Power (watts): 400mW
• Polarization: 6 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CM1213
SYMBOL PARAMETER
C
∆
R
V
I
MUTUAL
C
V
V
V
LEAK
I
C
ESD
DYN
P
CL
IN
P
F
IN
Note 1: All parameters specified at T
Note 2: Human Body Model per MIL-STD-883, Method 3015, C
Note 3: Standard IEC 61000-4-2 with C
Note 4: These measurements performed with no external capacitor on V
Operating Supply Voltage (V
Operating Supply Current
Diode Forward Voltage
Channel Leakage Current
Channel Input Capacitance
Channel Input Capacitance
Matching
Mutual Capacitance between
signal pin and adjacent signal pin
ESD Protection
Channel Clamp Voltage
Dynamic Resistance
Top Diode
Bottom Diode
Peak Discharge Voltage at any
channel input, in system
Positive Transients
Negative Transients
Positive Transients
Negative Transients
Contact discharge per
IEC 61000-4-2 standard
ELECTRICAL OPERATING CHARACTERISTICS
P
A
-V
= -40° C to +85° C unless otherwise noted.
Discharge
Rev. 3 | Page 5 of 17 | www.onsemi.com
N
)
CONDITIONS
(V
I
T
At 1 MHz, V
At 1 MHz, V
At 1 MHz, V
Notes 3 and 4; T
T
Note 4
I
Any I/O pin to Ground; Note 4
= 150pF, R
F
PP
A
A
= 8mA; T
=25° C; V
=25° C, I
P
= 1A, t
-V
N
)=3.3V
P
Discharge
PP
= 8/20uS
A
P
=25° C
=5V, V
P
P
P
= 1A, t
=3.3V, V
=3.3V, V
=3.3V, V
= 330Ω, V
Discharge
A
=25° C
N
P
=0V
= 8/20uS;
= 100pF, R
N
N
N
=0V, V
=0V, V
=0V, V
P
P
(V
= 3.3V, V
P
floating).
IN
IN
IN
=1.65V;
=1.65V;
=1.65V;
Discharge
N
grounded.
= 1.5KΩ, V
(SEE NOTE 1)
0.60
0.60
MIN
±8
P
= 3.3V, V
TYP
0.80
0.80
0.02
0.11
+8.8
±0.1
-1.4
3.3
1.0
0.7
0.4
N
grounded.
MAX
0.95
0.95
±1.0
5.5
8.0
1.5
UNITS
µA
µA
pF
pF
pF
kV
Ω
Ω
V
V
V
V
V