CM1213-06MR ON Semiconductor, CM1213-06MR Datasheet - Page 7

• Manufacturer Part Number: CM1213-06MR
• Description: TVS ARRAY ESD PROT LOW 6CH 8MSOP
• Manufacturer: ON Semiconductor

Specifications of CM1213-06MR

• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 6V
• Power (watts): 400mW
• Polarization: 6 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CM1213
Specifications (cont’d)
SYMBOL
V
V
I
V
V
LEAK
C
REV
ESD
SIG
CL
Note 1: T
Note 2: ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to
Note 3: These parameters are guaranteed by design and characterization.
PARAMETER
Reverse Standoff Voltage
Leakage Current
Signal Clamp Voltage
In-system ESD Withstand Voltage
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Channel Capacitance
a) Human Body Model, MIL-STD-883,
b) Contact Discharge per IEC 61000-4-2
ground.
Positive Clamp
Negative Clamp
Positive Transients
Negative Transients
A
Method 3015
Level 4
=25
°
C unless otherwise specified. GND in this document refers to the lower supply voltage.
ELECTRICAL OPERATING CHARACTERISTICS
Rev. 3 | Page 7 of 17 | www.onsemi.com
CONDITIONS
I
V
I
Notes 2 & 3
Notes 2 & 3
At 2.5V DC, f = 1MHz,
Note 3
DIODE
LOAD
IN
=3.3V DC
=10µA
= 10mA
MIN
-1.2
+30
+25
5.6
TYP
-0.8
+12
6.0
6.8
39
-8
1
MAX
100
-0.4
8.0
47
UNITS
nA
kV
kV
pF
V
V
V
V
V