SI1035X-T1-GE3 Vishay, SI1035X-T1-GE3 Datasheet

MOSFET N/P-CH 20V SC-89

SI1035X-T1-GE3

Manufacturer Part Number
SI1035X-T1-GE3
Description
MOSFET N/P-CH 20V SC-89
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1035X-T1-GE3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
180mA, 145mA
Vgs(th) (max) @ Id
400mV @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Transistor Polarity
N And P Channel
Continuous Drain Current Id
180mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
400mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1035X-T1-GE3TR
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
S
G
D
PRODUCT SUMMARY
Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
1
N-Channel
P-Channel
1
2
1
2
3
Complementary N- and P-Channel 20 V (D-S) MOSFET
Top View
SC-89
V
DS
- 20
20
b
(V)
6
5
4
J
a
D
G
S
12 at V
15 at V
20 at V
10 at V
8 at V
= 150 °C)
1
2
2
5 at V
7 at V
9 at V
R
DS(on)
GS
GS
GS
GS
GS
GS
GS
GS
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
a
= 4.5 V
= 2.5 V
= 1.8 V
= 1.5 V
()
T
T
T
T
Marking Code: M
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
I
D
= 25 °C, unless otherwise noted)
- 150
- 125
- 100
- 30
200
175
150
(mA)
50
Symbol
T
J
ESD
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
• Low Threshold: ± 0.9 V (typ.)
• Fast Switching Speed: 45 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
190
140
450
280
145
5 s
Definition
N-Channel, 5 
P-Channel, 8 
N-Channel
650
20
Steady State
®
180
130
380
250
130
Power MOSFET: 1.5 V Rated
- 55 to 150
2000
± 5
- 155
- 110
- 450
280
145
5 s
P-Channel
Vishay Siliconix
- 650
- 20
Steady State
- 145
- 105
- 380
250
130
Si1035X
www.vishay.com
Unit
mW
mA
°C
V
V
1

Related parts for SI1035X-T1-GE3

SI1035X-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a ...

Page 2

... Si1035X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage GSS I Zero Gate Voltage Drain Current DSS a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a g Forward Transconductance a V Diode Forward Voltage b Dynamic ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 71426 S10-2544-Rev. C, 08-Nov- °C, unless otherwise noted thru 150 200 250 0.6 0.8 Si1035X Vishay Siliconix 600 °C J 500 400 125 °C 300 200 100 0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 100 ...

Page 4

... Si1035X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (T 1000 T = 125 °C J 100 ° 0.0 0.2 0.4 0.6 0 Source-Drain Diode Forward Voltage 0.3 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature www.vishay.com °C, unless otherwise noted °C J 1.0 1 100 125 ...

Page 5

... Total Gate Charge (nC) g Gate Charge Document Number: 71426 S10-2544-Rev. C, 08-Nov- °C, unless otherwise noted 1 4 600 800 1000 1.0 1.2 1.4 1.6 Si1035X Vishay Siliconix 500 ° °C 400 300 200 100 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 120 ...

Page 6

... Si1035X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (T 1000 T = 125 °C J 100 ° 0.0 0.2 0.4 0.6 0 Source-Drain Diode Forward Voltage 0.3 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature www.vishay.com °C, unless otherwise noted °C J 1.0 1 100 125 ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71426. Document Number: 71426 S10-2544-Rev. C, 08-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1035X Vishay Siliconix Notes Duty Cycle ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords