SI1035X-T1-GE3 Vishay, SI1035X-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI1035X-T1-GE3
• Description: MOSFET N/P-CH 20V SC-89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1035X-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 145mA
• Vgs(th) (max) @ Id: 400mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 180mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1035X-T1-GE3TR

N- OR P-CHANNEL TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71426.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
A
= 25 °C, unless otherwise noted)
1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
A
t
1
= P
t
2
Vishay Siliconix
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 500 °C/W
Si1035X
www.vishay.com
6
0
0
7