SI1035X-T1 Vishay/Siliconix, SI1035X-T1 Datasheet

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SI1035X-T1

Manufacturer Part Number
SI1035X-T1
Description
MOSFET 20V 0.2/0.15A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1035X-T1

Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 20 V
Gate-source Breakdown Voltage
+/- 5 V
Continuous Drain Current
0.18 A, - 0.145 A
Resistance Drain-source Rds (on)
5 Ohms, 8 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-89-6
Minimum Operating Temperature
- 55 C
Power Dissipation
250 mW
Factory Pack Quantity
3000
Tradename
TrenchFET

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1035X-T1
Manufacturer:
TI
Quantity:
324
Part Number:
SI1035X-T1-E3
Manufacturer:
ITT
Quantity:
374
Part Number:
SI1035X-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
S
G
D
PRODUCT SUMMARY
Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
1
N-Channel
P-Channel
1
2
1
2
3
Complementary N- and P-Channel 20 V (D-S) MOSFET
Top View
SC-89
V
DS
- 20
20
b
(V)
6
5
4
J
a
D
G
S
12 at V
15 at V
20 at V
10 at V
8 at V
= 150 °C)
1
2
2
5 at V
7 at V
9 at V
R
DS(on)
GS
GS
GS
GS
GS
GS
GS
GS
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
a
= 4.5 V
= 2.5 V
= 1.8 V
= 1.5 V
()
T
T
T
T
Marking Code: M
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
I
D
= 25 °C, unless otherwise noted)
- 150
- 125
- 100
- 30
200
175
150
(mA)
50
Symbol
T
J
ESD
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
• Low Threshold: ± 0.9 V (typ.)
• Fast Switching Speed: 45 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
190
140
450
280
145
5 s
Definition
N-Channel, 5 
P-Channel, 8 
N-Channel
650
20
Steady State
®
180
130
380
250
130
Power MOSFET: 1.5 V Rated
- 55 to 150
2000
± 5
- 155
- 110
- 450
280
145
5 s
P-Channel
Vishay Siliconix
- 650
- 20
Steady State
- 145
- 105
- 380
250
130
Si1035X
www.vishay.com
Unit
mW
mA
°C
V
V
1

Related parts for SI1035X-T1

SI1035X-T1 Summary of contents

Page 1

... Top View Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si1035X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage GSS I Zero Gate Voltage Drain Current DSS a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a g Forward Transconductance a V Diode Forward Voltage b Dynamic Q Total Gate Charge ...

Page 3

... Document Number: 71426 S10-2544-Rev. C, 08-Nov- °C, unless otherwise noted thru 150 200 250 0.6 0.8 Si1035X Vishay Siliconix 600 °C J 500 400 125 °C 300 200 100 0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 100 ...

Page 4

... Si1035X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (T 1000 T = 125 °C J 100 ° 0.0 0.2 0.4 0.6 0 Source-Drain Diode Forward Voltage 0.3 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature www.vishay.com °C, unless otherwise noted ° ...

Page 5

... Total Gate Charge (nC) g Gate Charge Document Number: 71426 S10-2544-Rev. C, 08-Nov- °C, unless otherwise noted 1 4 600 800 1000 1.0 1.2 1.4 1.6 Si1035X Vishay Siliconix 500 ° °C 400 300 200 100 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 120 ...

Page 6

... Si1035X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (T 1000 T = 125 °C J 100 ° 0.0 0.2 0.4 0.6 0 Source-Drain Diode Forward Voltage 0.3 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature www.vishay.com °C, unless otherwise noted ° ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71426. Document Number: 71426 S10-2544-Rev. C, 08-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1035X Vishay Siliconix Notes Duty Cycle ...

Page 8

A Î Î Î Î Î Î Î Î 6 Î Î Î Î Î Î Î Î aaa C 1 Î Î Î Î Î Î Î Î ...

Page 9

RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead (0.300) Return to Index Return to Index Document Number: 72605 Revision: 21-Jan-08 0.051 (1.300) 0.012 0.020 (0.500) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 21 ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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