SI4500BDY-T1-GE3 Vishay, SI4500BDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4500BDY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4500BDY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4500BDY-T1-GE3TR

Document Number: 70880
S-00269—Rev. A, 26-Apr-99
0.08
0.06
0.04
0.02
4.5
3.6
2.7
1.8
0.9
30
24
18
12
6
0
0
0
0
0
0
V
I
D
V
DS
= 4.5 A
On-Resistance vs. Drain Current
GS
V
= 10 V
2
6
3
V
DS
= 2.5 V
GS
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
= 5 thru 3 V
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
12
4
6
2.5 V
18
6
9
V
GS
= 4.5 V
24
12
8
2 V
1.5 V
10
30
15
New Product
2100
1800
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
30
24
18
12
6
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
–25
V
I
rss
D
GS
0.5
= 4.5 A
V
V
4
= 4.5 V
DS
GS
T
J
0
Transfer Characteristics
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
www.vishay.com FaxBack 408-970-5600
C
1.0
oss
25 C
T
Capacitance
25
C
8
= 125 C
Vishay Siliconix
1.5
50
C
12
iss
75
Si4500DY
2.0
–55 C
100
16
2.5
125
150
2-3
3.0
20