SI4500BDY-T1-GE3 Vishay, SI4500BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4500BDY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4500BDY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4500BDY-T1-GE3TR

Si4500DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
–0.0
–0.2
–0.4
–0.6
20
10
0.4
0.2
0
–50
0
0.01
0.1
2
1
10
Source-Drain Diode Forward Voltage
–25
–4
0.2
V
T
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
SD
J
= 150 C
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
I
0.4
D
J
– Temperature ( C)
= 250 A
25
10
–3
0.6
50
Single Pulse
75
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
T
J
100
= 25 C
10
–2
1.0
125
150
1.2
Square Wave Pulse Duration (sec)
New Product
10
–1
1
0.10
0.08
0.06
0.04
0.02
80
60
40
20
0
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Juncion-To-Ambient
2
V
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.01
10
Notes:
P
– Gate-to-Source Voltage (V)
DM
JM
– T
A
Time (sec)
t
4
1
= P
t
2
DM
0.1
Z
I
D
thJA
S-00269—Rev. A, 26-Apr-99
thJA
= 4.5 A
100
Document Number: 70880
t
t
(t)
6
1
2
= 73 C/W
1
8
600
10
10