ALD1115MAL Advanced Linear Devices Inc, ALD1115MAL Datasheet - Page 3
![MOSFET N/P-CH 13.2V 8MSOP](/photos/18/28/182897/8-soic_sml.jpg)
ALD1115MAL
Manufacturer Part Number
ALD1115MAL
Description
MOSFET N/P-CH 13.2V 8MSOP
Manufacturer
Advanced Linear Devices Inc
Datasheet
1.ALD1115PAL.pdf
(6 pages)
Specifications of ALD1115MAL
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Fet Type
N and P-Channel
Fet Feature
Standard
Drain To Source Voltage (vdss)
13.2V
Vgs(th) (max) @ Id
1V @ 1µA
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
0 C
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
500 Ohm @ 5 V @ N Channel
Forward Transconductance Gfs (max / Min)
0.0018 S, 0.00067 S
Drain-source Breakdown Voltage
13.2 V
Gate-source Breakdown Voltage
13.2 V
Continuous Drain Current
+ 4.8 mA, - 2 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ALD1115MAL
Manufacturer:
Advanced Linear Devices
Quantity:
135
ALD1115
-7.5
-5.0
-2.5
0.02
0.05
0.01
-10
100
1.0
0.5
0.2
0.1
0.1
10
0
1
0
0
0
R
V
V
DS (ON)
V
f = 1KHz
FORWARD TRANSCONDUCTANCE
V
T
DS
BS
DRAIN SOURCE ON RESISTANCE
BS
A
BS
vs. DRAIN SOURCE VOLTAGE
= 25 C
-2
-2
OUTPUT CHARACTERISTICS
= 0.4V
= 0V
-2
= 0V
= 0V
DRAIN SOURCE VOLTAGE (V)
I
DRAIN SOURCE VOLTAGE (V)
DS
GATE SOURCE VOLTAGE (V)
P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
T
T
A
vs. GATE SOURCE VOLTAGE
= -1mA
A
= +25 C
= +25 C
-4
-4
-4
-6
-6
-6
I
DS
-8
-8
T
-8
= -5mA
A
T
= +125 C
V
A
GS
= +125 C
-10
-10
-10
= -12V
Advanced Linear Devices
-10V
-6V
-4V
-8V
-2V
-12
-12
-12
1000
-500
-250
100
500
250
-20
-10
-15
10
-5
0
1
0
-50
-320
0
V
V
V
DS
GS
V
T
-25
BS
A
BS
TRANSFER CHARACTERISTIC
= -12V
= 25 C
= V
-0.8
= 0V
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
= 0V
AMBIENT TEMPERATURE ( C)
-160
LOW VOLTAGE OUTPUT
DRAIN SOURCE VOLTAGE (mV)
WITH SUBSTRATE BIAS
BS
GATE SOURCE VOLTAGE (V)
2V
CHARACTERISTICS
0
= 0V
-1.6
+25
V
GS
0
+50
= -12V
-2.4
10V
12V
+75
4V
6V
8V
160
V
T
GS
A
-3.2
= 25 C
= V
+100
DS
-6V
-4V
-2V
3
+125
-4.0
320