ALD1115MAL Advanced Linear Devices Inc, ALD1115MAL Datasheet - Page 4
![MOSFET N/P-CH 13.2V 8MSOP](/photos/18/28/182897/8-soic_sml.jpg)
ALD1115MAL
Manufacturer Part Number
ALD1115MAL
Description
MOSFET N/P-CH 13.2V 8MSOP
Manufacturer
Advanced Linear Devices Inc
Datasheet
1.ALD1115PAL.pdf
(6 pages)
Specifications of ALD1115MAL
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Fet Type
N and P-Channel
Fet Feature
Standard
Drain To Source Voltage (vdss)
13.2V
Vgs(th) (max) @ Id
1V @ 1µA
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
0 C
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
500 Ohm @ 5 V @ N Channel
Forward Transconductance Gfs (max / Min)
0.0018 S, 0.00067 S
Drain-source Breakdown Voltage
13.2 V
Gate-source Breakdown Voltage
13.2 V
Continuous Drain Current
+ 4.8 mA, - 2 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ALD1115MAL
Manufacturer:
Advanced Linear Devices
Quantity:
135
ALD1115
100
0.5
0.2
20
10
15
10
20
0.1
10
2
5
1
0
5
1
0
0
0
R
T
T
V
V
DS (ON)
V
f = 1KHz
FORWARD TRANSCONDUCTANCE
A
V
T
A
DRAIN SOURCE ON RESISTANCE
DS
BS
BS
BS
A
= +125 C
vs. DRAIN SOURCE VOLTAGE
= +25 C
= 25 C
OUTPUT CHARACTERISTICS
= 0.2V
= 0V
2
= 0V
2
2
= 0V
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
vs. GATE SOURCE VOLTAGE
4
4
4
I
T
DS
A
= +25 C
= 1mA
6
6
6
V
GS
8
8
8
= 12V
I
10V
DS
T
8V
6V
4V
2V
A
= 10mA
= +125 C
10
10
10
Advanced Linear Devices
12
12
12
-1000
1000
1000
-500
500
100
20
15
10
10
5
0
0
1
-160
-50
0
V
V
V
BS
DS
GS
-25
TRANSFER CHARACTERISTIC
V
T
= 0V
BS
A
= +12V
= V
0.8
LOW VOLTAGE OUTPUT
OFF DRAIN CURRENT vs.
DRAIN SOURCE VOLTAGE (mV)
AMBIENT TEMPERATURE
= 25 C
AMBIENT TEMPERATURE ( C)
WITH SUBSTRATE BIAS
-80
GATE SOURCE VOLTAGE (V)
= 0V
BS
CHARACTERISTICS
0
= 0V
-2V
1.6
+25
-4V
V
GS
0
-6V
= 12V
+50
2.4
-8V
-10V
-12V
+75
80
V
T
3.2
A
GS
+100
= 25 C
= V
4V
2V
6V
4
DS
+125
160
4.0