SI2333CDS-T1-GE3 Vishay, SI2333CDS-T1-GE3 Datasheet - Page 5
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SI2333CDS-T1-GE3
Manufacturer Part Number
SI2333CDS-T1-GE3
Description
MOSFET P-CH D-S 12V SOT-23
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI2333CDS-T1-E3.pdf
(6 pages)
Specifications of SI2333CDS-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 5.1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
7.1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 4.5V
Input Capacitance (ciss) @ Vds
1225pF @ 6V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.035 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
5.1 A
Power Dissipation
1250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-5.1A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
59mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-23
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2333CDS-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2333CDS-T1-GE3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI2333CDS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2333CDS-T1-GE3/O3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68717.
Document Number: 68717
S09-2433-Rev. C, 16-Nov-09
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.1
0.05
Duty Cycle = 0.5
0.2
0.02
Duty Cycle = 0.5
0.2
0.1
0.02
Single Pulse
0.05
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
t
2
Vishay Siliconix
DM
100
Z
Si2333CDS
thJA
thJF
t
t
1
2
(t)
= 50 °C/W
www.vishay.com
1000
1
0
5