SI2333CDS Vishay Siliconix, SI2333CDS Datasheet

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SI2333CDS

Manufacturer Part Number
SI2333CDS
Description
P-Channel 12-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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www.DataSheet.co.kr
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
Document Number: 68717
S-81445-Rev. A, 23-Jun-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
MOSFET PRODUCT SUMMARY
V
DS
- 12
(V)
C
= 25 °C.
0.035 at V
0.045 at V
0.059 at V
R
DS(on)
GS
GS
GS
J
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= 150 °C)
b, d
Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free)
P-Channel 12-V (D-S) MOSFET
I
D
- 5.1
- 4.5
- 3.9
G
S
(A)
Steady State
a
1
2
≤ 5 s
A
Si2333CDS (O3)*
* Marking Code
= 25 °C, unless otherwise noted
Q
(SOT-23)
Top View
g
TO-236
9 nC
(Typ.)
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
3
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
R
R
D
thJA
thJF
FEATURES
APPLICATIONS
• Load Switch
• PA Switch
TrenchFET
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
®
Typical
Power MOSFET
75
40
- 55 to 150
- 0.63
- 5.1
- 4.0
1.25
0.8
Limit
- 7.1
- 5.7
- 1.0
- 12
- 20
± 8
2.5
1.6
Maximum
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
100
50
Si2333CDS
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI2333CDS Summary of contents

Page 1

... I ( 5.1 APPLICATIONS • Load Switch - 4 • PA Switch - 3.9 TO-236 (SOT-23 Top View Si2333CDS (O3)* * Marking Code Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free °C, unless otherwise noted ° ° ° ° ° ° °C ...

Page 2

... Si2333CDS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... 1 1.0 1 Si2333CDS Vishay Siliconix 2.0 1 °C C 1.0 0 125 ° °C C 0.0 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 2400 1800 C iss 1200 600 C oss ...

Page 4

... Si2333CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com ° ° ...

Page 5

... Document Number: 68717 S-81445-Rev. A, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si2333CDS Vishay Siliconix 1 100 10 Notes Duty Cycle ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...

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