SI3805DV-T1-GE3 Vishay, SI3805DV-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI3805DV-T1-GE3
• Description: MOSFET P-CH D-S 20V 6-TSOP
• Manufacturer: Vishay
• Series: LITTLE FOOT®r

Specifications of SI3805DV-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 84 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -3.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 84mohm
• Rds(on) Test Voltage Vgs: -10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3805DV-T1-GE3TR

Si3805DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
On-Resistance vs. Drain Current and Gate Voltage
10
15
12
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
= 3 A
1.5
1
3
V
DS
Output Characteristics
Q
V
- Drain-to-Source Voltage (V)
g
GS
3.0
I
- Total Gate Charge (nC)
D
= 2.5 V
- Drain Current (A)
Gate Charge
V
V
2
6
DS
GS
V
= 10 V
4.5
= 10 V thru 4 V
GS
V
GS
= 4.5 V
= 10 V
3
9
6.0
V
DS
V
V
= 16 V
GS
GS
12
4
7.5
= 2 V
= 3 V
A
9.0
15
5
= 25 °C, unless otherwise noted
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
0.0
1.5
1.3
1.1
0.9
0.7
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
C
- 25
rss
iss
0.4
V
V
4
DS
GS
Transfer Characteristics
V
C
T
0
GS
- Drain-to-Source Voltage (V)
J
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
= - 4.5 V, I
T
C
Capacitance
25
0.8
= 125 °C
8
S09-2110-Rev. B, 12-Oct-09
T
50
D
V
C
Document Number: 68912
GS
= - 2.6 A
= 25 °C
T
1.2
12
C
= - 10 V, I
75
= - 55 °C
100
D
1.6
16
= - 3 A
125
2.0
150
20