SI3805DV-T1-GE3 Vishay, SI3805DV-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI3805DV-T1-GE3
• Description: MOSFET P-CH D-S 20V 6-TSOP
• Manufacturer: Vishay
• Series: LITTLE FOOT®r

Specifications of SI3805DV-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 84 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -3.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 84mohm
• Rds(on) Test Voltage Vgs: -10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3805DV-T1-GE3TR

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 68912
S09-2110-Rev. B, 12-Oct-09
0.1
10
1
0.0
1.3
1.1
0.9
0.7
0.5
- 50
Soure-Drain Diode Forward Voltage
0.2
- 25
V
SD
I
D
- Source-to-Drain Voltage (V)
= 250 µA
0
0.4
T
Threshold Voltage
J
T
J
- Temperature (°C)
25
= 150 °C
0.6
50
0.8
75
0.01
100
0.1
10
T
1
0.1
J
100
= 25 °C
1.0
* V
Single Pulse
T
Safe Operating Area, Junction-to-Case
125
A
GS
= 25 °C
> minimum V
1.2
V
DS
150
A
Limited by R
- Drain-to-Source Voltage (V)
= 25 °C, unless otherwise noted
1
GS
at which R
DS(on)
BVDSS
Limited
*
10
DS(on)
0.20
0.16
0.12
0.08
0.04
0.00
8
6
4
2
0
0.01
is specified
10 ms
1 ms
100 ms
DC
1 s,10 s
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
V
GS
3
- Gate-to-Source Voltage (V)
0.1
Time (s)
6
Vishay Siliconix
1
Si3805DV
T
J
I
D
= 25 °C
T
9
www.vishay.com
= - 3 A
J
= 125 °C
10
12
5