SI3805DV-T1-GE3 Vishay, SI3805DV-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI3805DV-T1-GE3
• Description: MOSFET P-CH D-S 20V 6-TSOP
• Manufacturer: Vishay
• Series: LITTLE FOOT®r

Specifications of SI3805DV-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 84 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -3.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 84mohm
• Rds(on) Test Voltage Vgs: -10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3805DV-T1-GE3TR

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 68912
S09-2110-Rev. B, 12-Oct-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
A
Square Wave Pulse Duration (s)
10
= 25 °C, unless otherwise noted
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
thJA
100
Si3805DV
(t)
t
t
1
2
= 130 °C/W
www.vishay.com
600
10
7