SIR880DP-T1-GE3 Vishay, SIR880DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIR880DP-T1-GE3
• Description: MOSFET N-CH D-S 80V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR880DP-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Input Capacitance (ciss) @ Vds: 2440pF @ 40V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Gate Charge Qg: 49 nC
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8.5mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.2V
• Power Dissipation Pd: 6.25W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIR880DP-T1-GE3TR

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65702
S10-2683-Rev. B, 22-Nov-10
125
100
75
50
25
0
0
25
D
T
Power, Junction-to-Case
C
is based on T
- Case Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
105
84
63
42
21
0
0
125
Package Limited
25
150
T
C
- Case Temperature (°C)
Current Derating*
50
75
100
3.0
2.4
1.8
1.2
0.6
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
SiR880DP
www.vishay.com
125
150
5