SiR880DP Vishay Siliconix, SiR880DP Datasheet

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SiR880DP

Manufacturer Part Number
SiR880DP
Description
N-Channel 80 V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SiR880DP-T1-GE3
Manufacturer:
VISHA
Quantity:
20 000
Company:
Part Number:
SiR880DP-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
Document Number: 65702
S10-0635-Rev. A, 22-Mar-10
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
Ordering Information: SiR880DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
80
(V)
8
6.15 mm
D
0.0067 at V
0.0085 at V
0.0059 at V
7
D
6
R
D
PowerPAK
DS(on)
5
Bottom View
D
GS
GS
GS
(Ω)
J
= 7.5 V
= 4.5 V
= 10 V
= 150 °C)
b, f
1
®
S
SO-8
N-Channel 80 V (D-S) MOSFET
2
S
3
S
I
D
5.15 mm
60
60
60
4
(A)
G
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
g
23 nC
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Fixed Telecom
• POL
• DC/DC Converter
• Primary Side Switch
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
I
DM
thJC
I
AS
thJA
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
0.9
15
- 55 to 150
18.4
6.25
5.6
4.0
Limit
23
± 20
66.6
100
104
260
60
60
60
80
35
61
b, c
b, c
b, c
G
a
a
b, c
a
b, c
Maximum
N-Channel MOSFET
1.2
20
Vishay Siliconix
www.DataSheet4U.com
D
S
SiR880DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SiR880DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR880DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiR880DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V 2700 1800 900 100 2.1 1.8 1 1.2 0.9 0 SiR880DP www.DataSheet4U.com Vishay Siliconix T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... SiR880DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.05 0. °C J 0.03 0.02 0.01 0.00 0.8 1.0 1.2 200 160 120 250 µ ...

Page 5

... T - Case Temperature (°C) C Current Derating* 3.0 2.4 1.8 1.2 0.6 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR880DP www.DataSheet4U.com Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR880DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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