SiR880DP Vishay Siliconix, SiR880DP Datasheet - Page 4

• Manufacturer Part Number: SiR880DP
• Description: N-Channel 80 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

SiR880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.5
- 0.8
0.01
0.4
0.1
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
J
T
Threshold Voltage
= 150 °C
0.4
J
- Temperature (°C)
25
0.6
50
I
D
75
= 250 µA
0.8
0.01
T
100
0.1
10
J
100
1
= 25 °C
0.01
Limited by R
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
= 5 mA
125
GS
> minimum V
V
150
Single Pulse
1.2
T
DS
0.1
DS(on)
A
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
80
40
0
10
0
0 .
0
isspecified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
V
100
0.01
1 s
10 s
10 ms
100 ms
GS
1 ms
DC
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S10-0635-Rev. A, 22-Mar-10
Document Number: 65702
6
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T
J
1
T
J
= 125 °C
= 25 °C
8
10
1
0