SIR880DP-T1-GE3 Vishay, SIR880DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIR880DP-T1-GE3
• Description: MOSFET N-CH D-S 80V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR880DP-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Input Capacitance (ciss) @ Vds: 2440pF @ 40V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Gate Charge Qg: 49 nC
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8.5mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.2V
• Power Dissipation Pd: 6.25W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIR880DP-T1-GE3TR

SiR880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
www.vishay.com/ppg?65702.
1
10 -
10
-4
4
0.1
Single Pulse
0.05
Duty Cycle = 0.5
0.2
0.05
0.02
0.1
0.2
Duty Cycle = 0.5
10 -
0.02
3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10 -
2
Single Pulse
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10 -
1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-- T
t
1
1
A
S10-2683-Rev. B, 22-Nov-10
= P
t
2
Document Number: 65702
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 54 °C/W
1000
1
0