MGA-632P8-TR1G Avago Technologies US Inc., MGA-632P8-TR1G Datasheet

IC RF AMP GAAS MMIC 3.8GHZ 8TSLP

MGA-632P8-TR1G

Manufacturer Part Number
MGA-632P8-TR1G
Description
IC RF AMP GAAS MMIC 3.8GHZ 8TSLP
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of MGA-632P8-TR1G

Rf Type
Cellular, GSM, CDMA, W-CDMA
Gain
17.6dB
Current - Supply
75mA
Frequency
1.4GHz ~ 3GHz
Noise Figure
0.62dB
P1db
19.2dBm
Package / Case
8-WFDFN Exposed Pad
Test Frequency
1.95GHz
Voltage - Supply
4V
Frequency Rf
3.8GHz
Noise Figure Typ
0.62dB
Supply Current
57mA
Power Dissipation Pd
550mW
Frequency Max
3GHz
Manufacturer's Type
Low Noise Amplifier
Number Of Channels
1
Frequency (max)
3.8GHz
Operating Supply Voltage (max)
5.5V
Power Dissipation
550mW
Package Type
TSLP
Mounting
Surface Mount
Pin Count
8
Noise Figure (typ)
0.62@1950MHzdB
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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MGA-632P8
Low Noise, High Linearity Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-632P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA) with active
bias. The LNA has low noise with excellent input return
loss and high linearity achieved through the use of
Avago Technologies’ proprietary 0.5um GaAs Enhance-
ment-mode pHEMT process. The LNA has an extra feature
that allows a designer to adjust supply current and gain
externally. Due to the high isolation between the input
and output, gain can be adjusted independently through
a resistor in series with a blocking capacitor from the
output pin to FB1 pin, without affecting the noise figure.
It is housed in a miniature 2.0 x 2.0 x 0.75mm
Small Leadless Package (TSLP) package. The compact
footprint and low profile coupled with low noise, high
gain, excellent input return loss and high linearity make
the MGA-632P8 an ideal choice as an LNA for cellular in-
frastructure for GSM, CDMA, W-CDMA and TD-SCDMA ap-
plications.
It is designed for optimum use between 1.4GHz to
3.8GHz. For optimum performance at lower frequency
from 400MHz to 1.5GHz, the MGA-631P8 is recommend-
ed. Both MGA-631P8 and MGA-632P8 share the same
package and pinout.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm
Top View
Note:
Package marking provides
orientation and identification
“G2” is Device Code
“X” is month code

3
8-lead TSLP
Bottom View
Note:
Pin 1 : not used
Pin 2 : RFin
Pin 3 : RF ground Pin 7 : RFout
Pin 4 : Vbias
3
Pin 5 : FB1
Pin 6 : not used
Pin 8 : Gnd
8-pin Thin
Features
• Low noise figure
• Good input return loss
• High linearity performance
• High Isolation
• Externally adjustable supply current, 40-80mA
• Externally adjustable gain, 15-20dB
• GaAs E-pHEMT Technology
• Low cost small package size: 2.0x2.0x0.75 mm
• Excellent uniformity in product specifications
Specifications
1.95GHz; 4V, 57mA (typ)
• 17.6 dB Gain
• 0.62 dB Noise Figure
• -22.7 dB S11
• -40.5 dB S12
• 33.9 dBm Output IP3
• 19.2 dBm Output Power at 1dB gain compression
Applications
• Low noise amplifier for cellular infrastructure for GSM,
• Other ultra low noise applications.
Note:
1. Enhancement mode technology employs positive Vbias, thereby
CDMA, W-CDMA and TD-SCDMA.
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
[1]
3

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MGA-632P8-TR1G Summary of contents

Page 1

... Small Leadless Package (TSLP) package. The compact footprint and low profile coupled with low noise, high gain, excellent input return loss and high linearity make the MGA-632P8 an ideal choice as an LNA for cellular in- frastructure for GSM, CDMA, W-CDMA and TD-SCDMA ap- plications. ...

Page 2

... MGA-632P8 Absolute Maximum Rating Symbol Parameter Vd Device Supply Voltage P (ON Input Power in,max (Vd = 4.0V, Vbias=4.0V) P (OFF Input Power in,max (Vd=4.0V, Vbias=0V) P Total Power Dissipation diss T Junction Temperature j T Storage Temperature STG [3] Thermal Resistance (Vd = 4.0V, Vbias=4.0V), θ Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. ...

Page 3

Electrical Specifications °C, Vd =4V @ 57mA, R1=300ohm unless otherwise specified. A Symbol Parameter and Test Condition Id Operational Current Gain Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz OIP3 Freq=1.75 GHz Freq=1.85 GHz Freq=1.95 GHz NF ...

Page 4

Typical Electrical Specifications at 3.5GHz °C, Vd =4V @ 57mA, R1=300ohm unless otherwise specified. A Symbol Parameter and Test Condition Gain Freq=3.5GHz OIP3 Freq=3.5GHz NF Freq=3.5GHz 50Ω OP1dB Freq=3.5GHz IRL Freq=3.5GHz ORL Freq=3.5GHz S12 Freq=3.5GHz Notes: 1. ...

Page 5

... MGA-632P8 Typical Performance T = +25 ° 4V 57mA, R1=300ohm unless stated otherwise 20mA 40mA 7 60mA 80mA 5 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 Frequency (GHz) Figure 5. Gain Vs Frequency and (mA) Figure 8. Gain Vs Id and -40°C 25°C 10 85°C 0 0.0 1.0 2.0 3.0 4 ...

Page 6

... MGA-632P8 Typical Performance T = +25 ° 4V 57mA, R1=300ohm unless stated otherwise -40°C -30°C 15 25°C 85°C 10 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 Frequency (GHz) Figure 14. OIP3 vs Frequency and Temperature -40°C -30°C 5 25°C 85° (mA) Figure 17. OIP3 vs Id and Temperature ...

Page 7

... MGA-632P8 Typical Performance for 1.5 GHz Matching T = +25 ° 4V 57mA A 20 Gain 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Frequency (GHz) Figure 23. Gain and NF Vs Frequency MGA-632P8 Typical Performance for 2.6 GHz Matching T = +25 ° 4V 57mA Gain 2.3 2.4 2.5 2.6 2 ...

Page 8

Demo Board Layout Figure 32. Demo Board Layout Diagram - Recommended PCB material is 10 mils Rogers RO4350. - Suggested component values may vary according to layout and PCB material. Demo Board Schematic for Table 1 C7 Rbias RFin RFin ...

Page 9

Table 1 List 1 – Demo Board Component values for Demo board Schematic of Fig. 29. These component values are used when measuring electrical specifications and plots of Fig Fig. 21. List 2 – Demo Board Component values ...

Page 10

Load pull test set up Vbias C5 C6 Rbias C1 Input RFgnd C4 Vbias C7 Figure 34. Test setup for load pull data The input port is matched for good NF and IRL. Because of the high reverse isolation, any ...

Page 11

Measured results Test condition: 4V/57mA, 1.95GHz Refer to Table 1, List 1 for SMT component value and de- scription, unless otherwise stated. Γ Resistor, R1 160ohm 0.48 < 91.4° 56ohm 0.61 <134.2° 10kohm 0.40 < 150° Figure 35. Load pull ...

Page 12

Figure 36. Load pull contour plot for R1=56ohm Figure 37. Load pull contour plot for R1=10kohm 12 ...

Page 13

... MGA-632P8 Scattering Parameter and Noise Parameter Test Setup Figure 38. Test Setup for S & Noise Parameters data, C3=1.2pF (Rohm MCH155A1R2CK) Typical Noise Parameter, Vd=4V, Id=57mA, applicable to any R1 due to high reverse isolation Freq FMIN GAMMA (GHz) (dB) Mag 0.9 0.41 0.31 1.9 0.55 0.27 2 ...

Page 14

... MGA632P8 Typical Scattering Parameters, Vd=4V, Id=57mA, R1=91ohm Freq S11 (GHz) Mag Ang 0.1 0.97 -10.0 0.5 0.73 -39.0 0.9 0.53 -51.2 1.0 0.50 -52.8 1 ...

Page 15

... MGA632P8 Typical Scattering Parameters, Vd=4V, Id=57mA, R1=1.5kohm Freq S11 (GHz) Mag Ang 0.1 0.96 -10.0 0.5 0.75 -36.8 0.9 0.57 -50.3 1.0 0.54 -52.4 1 ...

Page 16

... MGA632P8 Typical Scattering Parameters, Vd=4V, Id=57mA, R1=10kohm Freq S11 (GHz) Mag Ang 0.1 0.96 -9.9 0.5 0.75 -36.8 0.9 0.57 -50.7 1.0 0.54 -52.8 1.5 0.43 -59.0 1.9 0.39 -61.6 2.0 0.38 -61.8 2.5 0.36 -63.7 3.0 0.34 -64.0 3.5 0.33 -65 ...

Page 17

... Ordering Information Part Number No. of Devices MGA-632P8-TR1G 3000 MGA-632P8-TR2G 10000 MGA-632P8-BLKG 100 TSLP2X2 Package Dimension PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 ∅ 0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) ...

Page 18

Device Orientation REEL USER FEED DIRECTION COVER TAPE Tape Dimensions 10° Max A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE ...

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