MGA-632P8-TR1G Avago Technologies US Inc., MGA-632P8-TR1G Datasheet - Page 2

• Manufacturer Part Number: MGA-632P8-TR1G
• Description: IC RF AMP GAAS MMIC 3.8GHZ 8TSLP
• Manufacturer: Avago Technologies US Inc.

Specifications of MGA-632P8-TR1G

• Rf Type: Cellular, GSM, CDMA, W-CDMA
• Gain: 17.6dB
• Current - Supply: 75mA
• Frequency: 1.4GHz ~ 3GHz
• Noise Figure: 0.62dB
• P1db: 19.2dBm
• Package / Case: 8-WFDFN Exposed Pad
• Test Frequency: 1.95GHz
• Voltage - Supply: 4V
• Frequency Rf: 3.8GHz
• Noise Figure Typ: 0.62dB
• Supply Current: 57mA
• Power Dissipation Pd: 550mW
• Frequency Max: 3GHz
• Manufacturer's Type: Low Noise Amplifier
• Number Of Channels: 1
• Frequency (max): 3.8GHz
• Operating Supply Voltage (max): 5.5V
• Power Dissipation: 550mW
• Package Type: TSLP
• Mounting: Surface Mount
• Pin Count: 8
• Noise Figure (typ): 0.62@1950MHzdB
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MGA-632P8 Absolute Maximum Rating
Thermal Resistance
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Board temperature T
3. Thermal resistance measured using Infra-Red Microscopy Technique.
Product Consistency Distribution Charts
Figure 1. Gain distribution at 57mA
Figure 3. Id distribution at 57mA
Note:
4. Distribution data sample size is 500 samples taken from 3 different wafer lots. Future wafer allocated to this product may have nominal values
2
Symbol
Vd
P
P
P
T
T
diss
j
STG
in,max
in,max
240
200
160
120
30000
20000
10000
anywhere between the upper and lower limits. Circuit losses have been de-embedded from actual measurements.
80
40
0
16
Process Capability for Gain
(OFF)
(ON)
LSL = 16.0
Nominal = 17.65
USL = 19.0
45
Process Capability for Vbias
16.5
LSL = 44
Nominal = 57
USL = 70
50
Parameter
Device Supply Voltage
CW RF Input Power
(Vd = 4.0V, Vbias=4.0V)
CW RF Input Power
(Vd=4.0V, Vbias=0V)
Total Power Dissipation
Junction Temperature
Storage Temperature
17
[3]
B
is 25 °C. Derate 21.2mW/ °C for T
Gain (dB)
(Vd = 4.0V, Vbias=4.0V), θ
55
17.5
Id (mA)
CPK Lower = 2.60
CPK Upper = 2.62
Std Dev = 1.22
18
60
CPK Lower = 2.78
CPK Upper = 2.47
Std Dev = 0.19
18.5
65
[1]
[4]
[2]
19
70
jc
B
>124 °C.
= 47 °C/W
Units
V
dBm
dBm
W
°C
°C
Figure 2. NF distribution at 57mA
Figure4. OIP3U distribution at 57mA.
Absolute Max.
5.5
20
25
0.55
150
-65 to 150
240
200
160
120
500
400
300
200
100
80
40
0
0.3
Process Capability for NF
31
Nominal = 0.62
USL = 1.0
0.4
Nominal = 33.9
LSL = 31.3
32
0.5
33
0.6
NF (dB)
OIP3U
0.7
34
CPK = 5.06
Std Dev = 0.025
0.8
35
Std Dev = 0.546
CPK = 1.553
0.9
36
1
37