AMMC-6430-W50 Avago Technologies US Inc., AMMC-6430-W50 Datasheet - Page 5

IC MMIC 1W POWER AMP 26-33GHZ

AMMC-6430-W50

Manufacturer Part Number
AMMC-6430-W50
Description
IC MMIC 1W POWER AMP 26-33GHZ
Manufacturer
Avago Technologies US Inc.
Type
Power Amplifierr
Datasheet

Specifications of AMMC-6430-W50

Function
Amplifier
Frequency Max
33GHz
Frequency Min
25GHz
Supply Voltage Max
7V
Number Of Channels
1
Frequency (max)
33GHz
Output Power
28.5@32000MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (typ)
5.5V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Supply Current
1000@5VmA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AMMC-6430-W50
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Biasing and Operation
The recommended quiescent DC bias condition for
optimum efficiency, performance, and reliability is Vd=5
volts with Vg set for Id=950 mA. Minor improvements in
performance are possible depending on the application.
The drain bias voltage range is 3 to 5.5V. A single DC gate
supply connected to Vg will bias all gain stages. Muting
can be accomplished by setting Vg and /or Vg to the
pinch-off voltage Vp.
An optional output power detector network is also
provided. The differential voltage between the Det-Ref
and Det-Out pads can be correlated with the RF power
emerging from the RF output port. The detected voltage
is given by :
where
voltage at the
power offset voltage. There are three methods to
calculate :
1.
2.
3.
The RF ports are AC coupled at the RF input to the first
stage and the RF output of the final stage. No ground
wired are needed since ground connections are made
with plated through-holes to the backside of the device.
5
V
=
ment (by removing or switching off the power source
and measuring ). This method gives an error due to
temperature drift of less than 0.01dB/50°C.
The drift error will be less than 0.25dB.
stored in a lookup table, or it can be measured at two
temperatures and a linear fit used to calculate at any
temperature. This method gives an error close to the
method #1.
V
V
V
(
ofs
ofs
ofs
V
ref
can be measured before each detector measure-
can be measured at a single reference temperature.
can either be characterized over temperature and
V
ref
V
is the voltage at the
det
)
DET _
V
ofs
O
port, and
DET _
V
ofs
is the zero-input-
R
port,
V
det
is a
Assembly Techniques
The backside of the MMIC chip is RF ground. For mi-
crostrip applications the chip should be attached directly
to the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy
For best performance, the topside of the MMIC should be
brought up to the same height as the circuit surrounding
it. This can be accomplished by mounting a gold plate
metal shim (same length and width as the MMIC) under
the chip which is of correct thickness to make the chip
and adjacent circuit the same height. The amount of
epoxy used for the chip and/or shim attachment should
be just enough to provide a thin fillet around the bottom
perimeter of the chip or shim. The ground plain should
be free of any residue that may jeopardize electrical or
mechanical attachment.
The location of the RF bond pads is shown in Figure
12. Note that all the RF input and output ports are in a
Ground-Signal configuration.
RF connections should be kept as short as reasonable to
minimize performance degradation due to undesirable
series inductance. A single bond wire is normally suf-
ficient for signal connections, however double bonding
with 0.7 mil gold wire or use of gold mesh is recom-
mended for best performance, especially near the high
end of the frequency band.
Thermosonic wedge bonding is preferred method for
wire attachment to the bond pads. Gold mesh can be
attached using a 2 mil round tracking tool and a tool
force of approximately 22 grams and a ultrasonic power
of roughly 55 dB for a duration of 76 +/- 8 mS. The guided
wedge at an untrasonic power level of 64 dB can be used
for 0.7 mil wire. The recommended wire bond stage tem-
perature is 150 +/- 2°C.
Caution should be taken to not exceed the Absolute
Maximum Rating for assembly temperature and time.
The chip is 100um thick and should be handled with care.
This MMIC has exposed air bridges on the top surface and
should be handled by the edges or with a custom collet
(do not pick up the die with a vacuum on die center).
This MMIC is also static sensitive and ESD precautions
should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
[1,2]
.

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