SI4200-GM Silicon Laboratories Inc, SI4200-GM Datasheet - Page 4

• Manufacturer Part Number: SI4200-GM
• Description: IC TXRX TRI-BAND 32MLP
• Manufacturer: Silicon Laboratories Inc

Specifications of SI4200-GM

• Frequency: 850MHz, 900MHz, 1.8GHz
• Modulation Or Protocol: GSM
• Applications: Cellular, GSM Cellular Radio
• Voltage - Supply: 2.7 V ~ 3.3 V
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Operating Temperature: -
• Sensitivity: -
• Memory Size: -
• Data Rate - Maximum: -
• Current - Transmitting: -
• Current - Receiving: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Table 1. Recommended Operating Conditions
Aero+
Electrical Specifications
Table 2. Absolute Maximum Ratings
4
Parameter
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Notes:
Parameter
DC Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
2. Supply voltage difference specification applies to power supply pins per IC.
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si4200 and Si4134T devices are high-performance RF integrated circuits with an ESD rating of < 2 kV.
3. For signals SCLK, SDI, SEN, PDN, XIN, XEN, XTALEN, and XDRVEN.
4. At SAW filter output for all bands.
Typical values apply at 2.85 V and an operating temperature of 25 °C unless otherwise stated. Parameters are tested in
production unless otherwise stated.
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Handling and assembly of these devices should only be done at ESD-protected workstations.
3
3
4
Symbol
1,2
V
V
T
DD
A
∆
Symbol
T
V
T
V
I
STG
IN
DD
OP
IN
Rev. 1.2
1,2
Test Condition
–0.3 to (V
–0.5 to 3.3
–55 to 150
–40 to 95
Value
±10
10
DD
–0.3
Min
–20
2.7
+ 0.3)
2.85
Typ
25
—
Max
3.0
0.3
85
dBm
Unit
mA
°C
°C
V
V
Unit
°C
V
V