VUO62-18NO7 IXYS, VUO62-18NO7 Datasheet

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VUO62-18NO7

Manufacturer Part Number
VUO62-18NO7
Description
RECT BRIDGE 3PH 63A 1800V PWS-D
Manufacturer
IXYS
Datasheet

Specifications of VUO62-18NO7

Voltage - Peak Reverse (max)
1800V
Current - Dc Forward (if)
63A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Chassis Mount
Package / Case
PWS-D
Vrrm, (v)
1800
Vrsm, (v)
1900
Idavm, (a)
63
@ Th, (°c)
-
@ Tc, (°c)
110
Ifsm, 10 Ms, Tvj = 45°c, (a)
550
Vt0, (v)
0.80
Rt, (mohms)
8.0
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
1.45
Rthjh, Per Chip, (k/w)
1.87
Package Style
PWS-D
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Three Phase
Rectifier Bridge
*
Symbol
I
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
d
d
a
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
© 2008 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
1200
1400
1600
1800
V
dAV
dAV
FSM
2
R
T
t
VJ
VJM
stg
S
A
ISOL
F
T0
800
delivery time on request
thJC
thJH
d
V
RRM
1300
1500
1700
1900
V
V
V
I
For power-loss calculations only
per diode
per module
per diode
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
900
V
F
RSM
R
R
= 150 A; T
Conditions
T
T
T
V
T
V
T
V
T
V
50/60Hz RMS;
I
Mounting torque (M5)
Terminal connection torque (M5)
typ.
Conditions
= V
= V
ISOL
C
A
VJ
VJ
VJ
VJ
R
R
R
R
= 45°C (R
= 110°C; module
= 0 V;
= 0 V;
= 0 V;
= 0 V;
= 45°C;
= T
= 45°C;
= T
RRM
RRM
≤ 1 mA;
Type
VUO 62-08NO7
VUO 62-12NO7
VUO 62-14NO7
VUO 62-16NO7
VUO 62-18NO7* VUO 82-18NO7*
;
;
VJM
VJM
;
;
T
T
VJ
VJ
VJ
= 25°C
= T
= 25°C
thCA
VJM
= 0.6 K/W); module
t = 10 ms (50 Hz); sine
t = 8.3 ms (60 Hz); sine
t = 10 ms (50 Hz); sine
t = 8.3 ms (60 Hz); sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
VUO 82-08NO7
VUO 82-12NO7
VUO 82-14NO7
VUO 82-16NO7
Characteristic Values
VUO 62
VUO 62
1520
1520
1250
1250
< 0.3
<
< 1.8
-40...+150
-40...+125
1.45
0.24
1.87
0.31
Maximum Ratings
550
600
500
550
0.8
63
48
5
8
5
5
9.4
3000
2500
10
50
150
160
±15%
±15%
~
~
~
+
0.183
0.253
2800
2800
2250
2250
VUO 82
VUO 82
1.52
750
820
670
740
0.3
1.6
0.8
1.1
88
57
5
5
m/s
K/W
K/W
K/W
K/W
mm
mm
Nm
Nm
A
A
A
A
mA
mA
V~
V~
°C
°C
°C
2
2
2
2
A
A
A
A
A
A
V
V
g
s
s
s
s
2
I
V
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
dAV
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E72873
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Easy to mount with two screws
Space and weight savings
Improved temperature and power cycling
RRM
= 63/88 A
= 800-1800 V
~
~ ~
2.5
+
20
60
54
72
23
48
~
18
+
~
20
10
2.5
VUO 62
VUO 82
~
-
20080811a
M5x10
1 - 3

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VUO62-18NO7 Summary of contents

Page 1

... Creeping distance on surface S d Creepage distance in air A a Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved + ~ VUO 82-08NO7 ~ ~ VUO 82-12NO7 ...

Page 2

... Fig. 4 Power dissipation versus direct output current and ambient temperature 2.5 K/W 2 1 0.01 0.1 t[s] Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved I F(OV) ------ I FSM I (A) FSM TVJ=45°C TVJ=150°C 1.6 ...

Page 3

... K/W 1 0.01 0.1 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 2 Fig. 2 Surge overload current per diode I : Crest value FSM t: duration Z thJK Z thJC ...

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