STPS12045TV STMicroelectronics, STPS12045TV Datasheet - Page 3

• Manufacturer Part Number: STPS12045TV
• Description: DIODE SCHOTTKY 45V 60A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STPS12045TV

• Voltage - Forward (vf) (max) @ If: 670mV @ 60A
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 120 A
• Max Surge Current: 900 A
• Configuration: Dual Parallel
• Forward Voltage Drop: 0.91 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: Screw
• Capacitance, Junction: 45 pF
• Current, Forward: 120 A
• Current, Reverse: 2 A
• Current, Surge: 900 A
• Package Type: ISOTOP
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 0.55 °C/W
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Voltage, Forward: 0.87 V
• Voltage, Reverse: 45 V
• Repetitive Reverse Voltage Vrrm Max: 45V
• Forward Current If(av): 120A
• Forward Voltage Vf Max: 910mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3207-5

Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
400
350
300
250
200
150
100
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
5E+5
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
Fig. 7:
current (maximum values, per diode).
1E+3
1E+2
1E+1
50
1E-3
0
IM(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
IR(µA)
IFM(A)
I
M
5
Forward voltage drop versus forward
=0.5
t
10
1E-2
15
Typical values
Tj=125°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=150°C
Tj=50°C
Tj=25°C
20
VFM(V)
VR(V)
t(s)
Tj=125°C
25
1E-1
30
Tj=25°C
35
Tc=125°C
Tc=75°C
Tc=100°C
40
1E+0
45
Fig.4 : Relative variation of thermal transient
impedance junction to case versus pulse duration.
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10.0
1.0
0.1
1E-3
Zth(j-c)/Rth(j-c)
1
C(nF)
= 0.2
= 0.5
= 0.1
Single pulse
2
1E-2
5
tp(s)
VR(V)
1E-1
10
STPS12045TV
1E+0
20
=tp/T
T
F=1MHz
Tj=25°C
tp
5E+0
3/4
50