BYV541V-200 STMicroelectronics, BYV541V-200 Datasheet - Page 2

• Manufacturer Part Number: BYV541V-200
• Description: DIODE FAST REC 200V 50A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of BYV541V-200

• Voltage - Forward (vf) (max) @ If: 850mV @ 50A
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Current - Average Rectified (io) (per Diode): 50A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2689-5

BYV54V / BYV541V
2/5
THERMAL RESISTANCE
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
RECOVERY CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Pulse test :
* tp = 5 ms, duty cycle < 2 %
Symbol
Symbol
Symbol
Rth (j-c)
trr
tfr
V
Rth (c)
V
FP
I
R
F **
*
** tp = 380 s, duty cycle < 2 %
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
Junction to case
Coupling
= 25°C
= 25°C
= 25°C
= 25 C
= 100°C
= 125°C
= 125°C
= 25°C
Test Conditions
Test Conditions
I
I
I
V
I
V
I
F
R
F
F
F
R
FR
V
I
I
I
= 0.5A
= 1A
= 1A
= 1A
= 1A
F
F
F
= 30V
R
= 1.1 x V
= 50 A
= 100 A
= 100 A
= V
Parameter
RRM
F
Irr = 0.25A
dI
tr = 5 ns
tr = 5 ns
F
/dt = -50A/ s
Per diode
Total
Min.
Min.
Typ.
Typ.
10
1.5
Value
0.85
1.2
0.1
Max.
Max.
0.85
1.00
1.15
40
60
50
5
°C/W
Unit
Unit
Unit
mA
ns
ns
V
C/W
V
A