CPV362M4F Vishay, CPV362M4F Datasheet
CPV362M4F
Specifications of CPV362M4F
VS-CPV362M4F
VS-CPV362M4F
VSCPV362M4F
VSCPV362M4F
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CPV362M4F Summary of contents
Page 1
... R (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction JC R (DIODE) Junction-to-Case, each diode, one diode in conduction JC R (MODULE) Case-to-Sink, flat, greased surface CS Wt Weight of module CPV362M4F 90° 125°C, Supply Voltage 360Vdc -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55-0.8 N• ...
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... CPV362M4F Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... 150 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 15V CPV362M4F 0° ° tor = ula tio . ted V o lta 150 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) GE Fig Typical Transfer Characteristics 2 ...
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... CPV362M4F Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 1 0.10 0.05 0.02 0. SINGLE PULSE (T H ERMA L RES PO NSE) 0.01 0.000 01 0.00 01 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 125 150 C) ° Fig Typical Collector-to-Emitter Voltage 0 .00 1 0.01 ...
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... Fig Typical Capacitance vs. Collector-to-Emitter Voltage 0. 480V 15V GE ° 4.8A C 0.45 0.44 0.43 0. Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance f = 1MHz C SHORTED 100 40 50 CPV362M4F 400V 4. Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 50Ohm 15V 480V CC 1 0.1 -60 -40 - ...
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... CPV362M4F 2 50Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 0° 5° 5° 0.4 0.8 1.2 1.6 2.0 2.4 F orwa rd V olta ge D rop - V ...
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... ° 400 300 200 100 0 100 /µ Fig Typical Stored Charge vs. di 100 1000 Fig Typical Recovery Current vs. di /dt f 10000 1000 100 1000 /dt f CPV362M4F ° ° . 100 di / µ ° ° 4 8. 100 di / /µs) f Fig Typical di /dt vs. di (rec ...
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... CPV362M4F 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode 10 td( on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Same t ype device as D.U.T. D.U. d(on) r d(off) f Fig. 18b - G ATE VO LTA . DUT V O LTA URR E NT Ipk Ic t2 ...
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... F 100 ATE D.U. 480V CPV362M4F DE VICE UNDE CURR . D.U.T. CURR 480V @25°C C ...
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... CPV362M4F Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. 3.91 ( .154) 2X 21.97 (.865 3.94 (.155) 4.06 ± 0.51 (.160 ± .020) 5.08 (.200) 6X WORLD HEADQUARTERS: 233 Kansas St ...