CPV362M4F Vishay, CPV362M4F Datasheet - Page 2

• Manufacturer Part Number: CPV362M4F
• Description: IGBT SIP MODULE 600V 8.8A IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.66V @ 15V, 8.8A
• Current - Collector (ic) (max): 8.8A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.34nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *CPV362M4F; VS-CPV362M4F; VS-CPV362M4F; VSCPV362M4F; VSCPV362M4F

CPV362M4F
Electrical Characteristics @ T
Switching Characteristics @ T
Notes:
E
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
t
t
t
t
E
C
C
C
t
I
Q
di
CES
GES
d(on)
d(off)
f
d(on)
d(off)
f
rr
r
r
rr
ts
fe
V
on
off
ts
oes
(BR)CES
CE(on)
GE(th)
g
ge
ies
res
FM
gc
V
rr
(rec)M
(BR)CES
GE(th)
limited by max. junction temperature.
( See fig. 20 )
Repetitive rating; V
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Parameter
Parameter
GE
=20V, pulse width
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
V
Pulse width
R
CC
G
= 50 , ( See fig. 19 )
Min. Typ. Max. Units
Min. Typ. Max. Units
=80%(V
600
––– 0.72 –––
––– 1.66 –––
––– 1.42 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.23 –––
––– 0.33 –––
––– 0.45 0.70
–––
–––
–––
–––
––– 0.93 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1.41
–––
3.0
2.9
–––
––– 1700
––– ±100
200
435
124
240
210
–––
-11
–––
214
364
340
1.4
5.9
3.5
5.0
1.3
4.0
4.5
30
13
49
22
48
25
63
37
55
65
CES
80µs; duty factor
), V
–––
–––
––– mV/°C V
–––
250
–––
–––
300
320
–––
–––
–––
–––
–––
–––
138
360
–––
–––
1.7
6.0
1.7
1.6
6.0
8.0
45
20
55
90
50
GE
=20V, L=10µH,
V/°C
A/µs
nA
µA
nC
mJ
mJ
nC
V
V
V
ns
ns
pF
ns
S
A
ƒ = 1.0MHz
V
V
I
I
I
V
V
V
V
I
I
V
I
V
See Fig. 8
T
I
V
Energy losses include "tail" and
diode reverse recovery
See Fig. 9, 10, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery
V
V
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
J
GE
J
GE
GE
CC
J
J
J
J
J
= 4.8A, T
= 8.0A, T
= 4.8A
= 8.8A
= 8.0A
= 4.8A
= 4.8A, V
= 4.8A, V
= 25°C
= 125°C
= 125°C
= 125°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
0.1%.
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 15V, R
= 15V, R
= ±20V
= 400V
= 0V
= 30V
GE
GE
shot.
, I
, I
C
C
J
J
CE
CC
CC
C
C
CE
See Fig.
See Fig.
See Fig.
See Fig.
Pulse width 5.0µs, single
= 150°C
= 150°C
= 1.0mA
= 250µA
G
G
Conditions
Conditions
C
= 250µA
= 250µA
= 600V, T
= 480V
= 50
= 480V
= 50
= 600V
= 4.8A
17
See Fig. 10,11, 18
14
15
16
See Fig. 7
di/dt = 200A/µs
See Fig. 2, 5
V
See Fig. 13
J
GE
= 150°C
I
V
F
R
= 15V
= 8.0A
= 200V