CPV362M4F Vishay, CPV362M4F Datasheet - Page 5

• Manufacturer Part Number: CPV362M4F
• Description: IGBT SIP MODULE 600V 8.8A IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.66V @ 15V, 8.8A
• Current - Collector (ic) (max): 8.8A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.34nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *CPV362M4F; VS-CPV362M4F; VS-CPV362M4F; VSCPV362M4F; VSCPV362M4F

Fig. 9 - Typical Switching Losses vs. Gate
0.46
0.45
0.44
0.43
0.42
1000
800
600
400
200
0
10
Fig. 7 - Typical Capacitance vs.
V
V
T
1
I
J
C
Collector-to-Emitter Voltage
CC
GE
= 25 C
= 4.8A
= 480V
= 15V
V
R , Gate Resistance (Ohm)
CE
G
20
°
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=
0V,
C
C
C
ge
gc
ce
C res
C ies
C oes
30
+ C
+ C
10
f = 1MHz
gc ,
gc
C
ce
40
SHORTED
100
50
0.1
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G
CC
C
= 50Ohm
= 15V
= 480V
= 400V
= 4.8A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
6
G
0
CPV362M4F
20
12
40
60
18
80 100 120 140 160
I =
I =
I =
C
C
C
°
24
9.6
4.8
2.4
A
A
A
30