MUBW50-06A7 IXYS, MUBW50-06A7 Datasheet

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MUBW50-06A7

Manufacturer Part Number
MUBW50-06A7
Description
MODULE IGBT CBI E2
Manufacturer
IXYS
Datasheet

Specifications of MUBW50-06A7

Configuration
Three Phase Inverter with Brake
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
800µA
Input Capacitance (cies) @ Vce
2.8nF @ 25V
Power - Max
250W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E2
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vrrm, Rect 1/3 Ph., (v)
1600
Idavm, Tc = 80°c, Rect 1/3 Ph., (a)
29
Rthjc, Typ, Rect 1/3 Ph., (k/w)
1.06
Vces, Inv 3 - Ph., (v)
600
Ic25, Tc = 25°c, Inv 3 - Ph., (a)
75
Ic80, Tc = 80°c, Inv 3 - Ph., (a)
50
Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)
1.9
Rthjc, Typ, Inv 3 - Ph., (k/w)
0.5
Vces, Br Chopper, (v)
600
Ic80, Tc = 80°c, Br Chopper, (a)
25
Rthjc, Typ, Br Chopper, (k/w)
1.0
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUBW50-06A7
Manufacturer:
FUJI
Quantity:
452
Part Number:
MUBW50-06A7
Quantity:
60
Converter - Brake - Inverter Module
Three Phase
Rectifier
V
I
I
Symbol
V
I
I
I
P
Symbol
V
I
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
Input Rectifier Bridge D11 - D16
FAV
DAVM
FSM
R
R
DAVM
FSM
rr
RRM
tot
F
D12
D11
RRM
thJC
1
= 1600V
= 44 A
= 400 A
D13
D14
2
Conditions
T
T
T
T
Conditions
I
V
V
(per diode)
F
C
C
VJ
C
R
R
= 50 A; T
D15
D16
= 80°C; sine 180°
= 80°C; rectangular; d = 1/3
= 25°C
= V
= 100 V; I
= 25°C; t = 10 ms; sine 50 Hz
23
3
RRM
Brake Chopper
V
I
V
C25
21
CES
CE(sat)
; T
T
T
VJ
VJ
14
VJ
VJ
F
= 25°C
24
= 125°C
22
= 25°C
= 20 A; di/dt = -20 A/µs
= 125°C
= 600 V
= 35 A
= 2.1 V
7
T7
D7
Inverter
V
I
V
Three Phase
16
15
11
10
C25
(T
CES
CE(sat)
T2
T1
VJ
= 25 C, unless otherwise specified)
= 600 V
= 75 A
= 1.9 V
D1
D2
6
12
18
17
NTC
min.
T3
T4
Characteristic Values
Maximum Ratings
D3
D4
typ.
1.5
1.6
5
1600
2
1
400
120
30
29
20
19
13
T5
T6
max.
1.06 K/W
1.8
0.2 mA
(CBI2)
8
9
mA
D5
D6
W
µs
V
A
A
A
4
V
V
Application: AC motor drives with
Features
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
High level of integration - only one power
semiconductor module required for the
whole drive
Fast rectifier diodes for enhanced EMC
behaviour
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
MUBW 50-06 A7
1 - 8

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MUBW50-06A7 Summary of contents

Page 1

... C Symbol Conditions 25° 125° 25° RRM T = 125° 100 di/dt = -20 A/µ (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved (CBI2 NTC 9 Three Phase Inverter V = 600 V CES C25 ...

Page 2

... F25 80°C F80 C Symbol Conditions /dt = -500 A/µ 300 (per diode) thJC © 2001 IXYS All rights reserved Maximum Ratings 600 125° 100 CEK CES = 125° 250 Characteristic Values ( unless otherwise specified) VJ min. typ. = 25°C 1 125°C 2 ...

Page 3

... Symbol Conditions 25° 125° 25° RRM T = 125° /dt = -400 A/µ 300 thJC © 2001 IXYS All rights reserved Maximum Ratings 600 125° CEK CES = 125° 125 Characteristic Values ( unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2.4 VJ 4.5 = 25° ...

Page 4

... Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") © 2001 IXYS All rights reserved Characteristic Values min. typ. max. 4.75 5.0 5.25 k 3375 K Maximum Ratings -40...+125 C 150 C -40...+125 C ...

Page 5

... Power dissipation versus direct output current and ambient temperature, sin 1 8 1.2 K/W 1.0 Z thJC 0.8 0.6 0.4 0.2 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2001 IXYS All rights reserved 200 50Hz, 80% V RRM A 160 45°C FSM VJ 120 125°C VJ ...

Page 6

... V CE Fig. 8 Typ. output characteristics 125° 0.0 0.5 1.0 1 Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 11V 125° 25° 2 125° 300V R = 30A MUBW5006A7 800 A/ s 1000 ...

Page 7

... Fig. 18 Typ. transient thermal impedance 400 ns E off 300 t d(off) 200 = 300V CE = ±15V 100 G = 125° 120 600 ns E off t 400 d(off) = 300V CE = ±15V GE 200 = 50A = 125° diode IGBT MUBW5006A7 ...

Page 8

... Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 100 100 T Fig. 24 Typ. thermistorresistance versus temperature = 25° 500 ns 400 t 300 = 300V 200 CE = ±15V GE = 25A 100 = 125° 100 120 R G MUBW5006A7 125 °C 150 ...

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