MUBW50-06A7 IXYS, MUBW50-06A7 Datasheet

MUBW50-06A7

Manufacturer Part Number

MUBW50-06A7

Description

MODULE IGBT CBI E2

Manufacturer

IXYS

Datasheet

1.MUBW50-06A7.pdf (8 pages)

Specifications of MUBW50-06A7

Configuration

Three Phase Inverter with Brake

Igbt Type

NPT

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

2.4V @ 15V, 50A

Current - Collector (ic) (max)

75A

Current - Collector Cutoff (max)

800µA

Input Capacitance (cies) @ Vce

2.8nF @ 25V

Power - Max

250W

Input

Three Phase Bridge Rectifier

Ntc Thermistor

Yes

Mounting Type

Chassis Mount

Package / Case

Channel Type

Collector-emitter Voltage

600V

Collector Current (dc) (max)

75A

Gate To Emitter Voltage (max)

±20V

Pin Count

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Vrrm, Rect 1/3 Ph., (v)

1600

Idavm, Tc = 80°c, Rect 1/3 Ph., (a)

Rthjc, Typ, Rect 1/3 Ph., (k/w)

1.06

Vces, Inv 3 - Ph., (v)

600

Ic25, Tc = 25°c, Inv 3 - Ph., (a)

Ic80, Tc = 80°c, Inv 3 - Ph., (a)

Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)

1.9

Rthjc, Typ, Inv 3 - Ph., (k/w)

0.5

Vces, Br Chopper, (v)

600

Ic80, Tc = 80°c, Br Chopper, (a)

Rthjc, Typ, Br Chopper, (k/w)

1.0

Package Style

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MUBW50-06A7

Manufacturer:

FUJI

Quantity:

452

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

MUBW50-06A7

Quantity:

Current page: 1 of 8
Download datasheet (190Kb)

Converter - Brake - Inverter Module

Three Phase

Rectifier

Symbol

IXYS reserves the right to change limits, test conditions and dimensions.

Input Rectifier Bridge D11 - D16

FAV

DAVM

FSM

DAVM

FSM

RRM

tot

D12

D11

RRM

thJC

= 1600V

= 44 A

= 400 A

D13

D14

Conditions

(per diode)

= 50 A; T

D15

D16

= 80°C; sine 180°

= 80°C; rectangular; d = 1/3

= 25°C

= V

= 100 V; I

= 25°C; t = 10 ms; sine 50 Hz

RRM

Brake Chopper

C25

CES

CE(sat)

; T

= 25°C

= 125°C

= 25°C

= 20 A; di/dt = -20 A/µs

= 125°C

= 600 V

= 35 A

= 2.1 V

Inverter

Three Phase

C25

CES

CE(sat)

= 25 C, unless otherwise specified)

= 600 V

= 75 A

= 1.9 V

NTC

min.

Characteristic Values

Maximum Ratings

typ.

1.5

1.6

1600

400

120

max.

1.06 K/W

1.8

0.2 mA

(CBI2)

µs

Application: AC motor drives with

Features

Input from single or three phase grid

Three phase synchronous or

asynchronous motor

electric braking operation

High level of integration - only one power

semiconductor module required for the

whole drive

Fast rectifier diodes for enhanced EMC

behaviour

NPT IGBT technology with low

saturation voltage, low switching

losses, high RBSOA and short circuit

ruggedness

Epitaxial free wheeling diodes with

Hiperfast and soft reverse recovery

Industry standard package with insulated

copper base plate and soldering pins for

PCB mounting

Temperature sense included

MUBW 50-06 A7

1 - 8

Related parts for MUBW50-06A7

MUBW50-06A7 Summary of contents

Page 1

... C Symbol Conditions 25° 125° 25° RRM T = 125° 100 di/dt = -20 A/µ (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved (CBI2 NTC 9 Three Phase Inverter V = 600 V CES C25 ...

Page 2

... F25 80°C F80 C Symbol Conditions /dt = -500 A/µ 300 (per diode) thJC © 2001 IXYS All rights reserved Maximum Ratings 600 125° 100 CEK CES = 125° 250 Characteristic Values ( unless otherwise specified) VJ min. typ. = 25°C 1 125°C 2 ...

Page 3

... Symbol Conditions 25° 125° 25° RRM T = 125° /dt = -400 A/µ 300 thJC © 2001 IXYS All rights reserved Maximum Ratings 600 125° CEK CES = 125° 125 Characteristic Values ( unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2.4 VJ 4.5 = 25° ...

Page 4

... Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") © 2001 IXYS All rights reserved Characteristic Values min. typ. max. 4.75 5.0 5.25 k 3375 K Maximum Ratings -40...+125 C 150 C -40...+125 C ...

Page 5

... Power dissipation versus direct output current and ambient temperature, sin 1 8 1.2 K/W 1.0 Z thJC 0.8 0.6 0.4 0.2 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2001 IXYS All rights reserved 200 50Hz, 80% V RRM A 160 45°C FSM VJ 120 125°C VJ ...

Page 6

... V CE Fig. 8 Typ. output characteristics 125° 0.0 0.5 1.0 1 Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 11V 125° 25° 2 125° 300V R = 30A MUBW5006A7 800 A/ s 1000 ...

Page 7

... Fig. 18 Typ. transient thermal impedance 400 ns E off 300 t d(off) 200 = 300V CE = ±15V 100 G = 125° 120 600 ns E off t 400 d(off) = 300V CE = ±15V GE 200 = 50A = 125° diode IGBT MUBW5006A7 ...

Page 8

... Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 100 100 T Fig. 24 Typ. thermistorresistance versus temperature = 25° 500 ns 400 t 300 = 300V 200 CE = ±15V GE = 25A 100 = 125° 100 120 R G MUBW5006A7 125 °C 150 ...

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