CM200DU-12NFH Powerex Inc, CM200DU-12NFH Datasheet - Page 2
CM200DU-12NFH
Manufacturer Part Number
CM200DU-12NFH
Description
IGBT MOD DUAL 600V 200A NFH SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet
1.CM200DU-12NFH.pdf
(4 pages)
Specifications of CM200DU-12NFH
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
55nF @ 10V
Power - Max
590W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
590W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Distributorinventory
View
Voltage
600V
Current
200A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA507
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2C-5015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2C-5015 - KIT DEV BOARD 5A FOR IGBTBG2C-3015 - KIT DEV BOARD 3A FOR IGBTBG2A-NFH - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1082
CM200DU-12NFH
CM200DU-12NFH
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200DU-12NFH
Quantity:
55
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T C = 25°C)
Peak Collector Current
Emitter Current** (T C = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T C = 25°C, T j ≤ 150°C)
Maximum Collector Dissipation (T C' = 25°C, T j' ≤ 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Dynamic Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
* Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V CE(sat)
V GE(th)
Symbol
Symbol
t d(on)
t d(off)
I GES
I CES
C oes
C res
V EC
C ies
Q G
Q rr
t rr
t r
t f
Inductive Load Switching Operation,
V CC = 300V, I C = 200A, V GE = 15V
I C = 200A, V GE = 15V, T j = 125°C
V GE1 = V GE2 = 15V, R G = 6.3Ω,
I C = 200A, V GE = 15V, T j = 25°C
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
V CC = 300V, I C = 200A,
I C = 20mA, V CE = 10V
V CE = 10V, V GE = 0V
I E = 100A, V GE = 0V
Test Conditions
Test Conditions
I E = 200A
Symbol
V GES
V CES
V ISO
T stg
I CM
I EM
P C
P C
I C
I E
—
—
—
T j
Min.
Min.
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM200DU-12NF
–40 to 150
–40 to 125
2500
200*
400*
200*
400*
600
±20
590
830
310
30
40
1240
Typ.
1.95
Typ.
6.0
2.0
3.5
—
—
—
—
—
—
—
—
—
—
—
Max.
Max.
250
150
500
150
150
0.5
2.7
2.6
3.6
2.0
1.0
7.0
—
—
—
55
Amperes
Amperes
Amperes
Amperes
Grams
Rev. 11/09
Watts
Watts
Volts
Units
Volts
Volts
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf