CM600HU-12F Powerex Inc, CM600HU-12F Datasheet - Page 2

• Manufacturer Part Number: CM600HU-12F
• Description: IGBT MOD SGL 600V 600A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM600HU-12F

• Igbt Type: Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 160nF @ 10V
• Power - Max: 1420W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 600A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 1.42kW
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 600V
• Current: 600A
• Circuit Configuration: Single
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA503
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 835-1098; CM600HU-12F

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM600HU-12F
Trench Gate Design Single IGBTMOD™
600 Amperes/600 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
* Pulse width and repetition rate should be such that the device junction temperature (T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
c
c
= 25 C)
= 25 C)
j
150 C)
c
= 25 C)
j
= 25 C unless otherwise specified
j
V
= 25 C unless otherwise specified
V
Symbol
CE(sat)
I
I
GE(th)
V
CES
GES
Q
EC
G
V
I
I
C
CC
C
= 600A, V
= 600A, V
= 300V, I
V
V
I
C
I
CE
GE
E
= 60mA, V
= 600A, V
= V
= V
Test Conditions
GE
C
GE
CES
GES
j
) does not exceed T
= 600A, V
Symbol
= 15V, T
V
V
= 15V, T
T
V
I
I
, V
, V
CES
GES
CM
EM
P
I
I
T
stg
–
–
–
–
iso
CE
C
E
GE
c
j
GE
CE
= 10V
= 0V
= 0V
= 0V
j
j
GE
= 125 C
= 25 C
= 15V
j(max)
rating.
CM600HU-12F
Min.
-40 to 150
-40 to 125
–
–
5
–
–
–
–
1200*
1200*
1420
2500
600
600
600
450
95
40
15
20
3720
Typ.
–
–
6
1.6
1.6
–
80
Max.
1
7
2.2
–
–
2.6
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
in-lb
in-lb
in-lb
Volts
Volts
Volts
Volts
C
C
mA
nC
A