CM600HU-12F Powerex Inc, CM600HU-12F Datasheet - Page 3

• Manufacturer Part Number: CM600HU-12F
• Description: IGBT MOD SGL 600V 600A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM600HU-12F

• Igbt Type: Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 160nF @ 10V
• Power - Max: 1420W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 600A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 1.42kW
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 600V
• Current: 600A
• Circuit Configuration: Single
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA503
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 835-1098; CM600HU-12F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM600HU-12F
Trench Gate Design Single IGBTMOD™
600 Amperes/600 Volts
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R
R
R
Symbol
Symbol
R
th(j-c)
t
t
th(j-c)
th(j-c)
C
C
C
d(on)
d(off)
th(c-f)
Q
j
t
oes
res
t
t
ies
rr
= 25 C unless otherwise specified
r
f
rr
'Q
Q
D
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
T
c
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chip
Per FWDi, T
V
Per IGBT, T
V
CC
V
Switching Operation
CE
GE1
Inductive Load
Test Conditions
= 300V, I
= 10V, V
R
I
Test Conditions
Per IGBT,
E
= V
G
= 600A
= 3.1 ,
GE2
c
c
Reference
C
Reference
GE
= 15V,
= 600A,
= 0V
Min.
Min.
–
–
–
–
–
–
–
–
–
–
–
–
–
11.7
Typ.
Typ.
–
–
–
–
–
–
–
–
–
0.04
0.02
160
600
400
900
250
300
11
Max.
Max.
6
–
0.088
0.12
–
Units
Units
C/W
C/W
C/W
C/W
ns
ns
ns
ns
ns
nf
nf
nf
C
3