CM200DU-24F Powerex Inc, CM200DU-24F Datasheet - Page 3
![IGBT MOD DUAL 1200V 200A F SER](/photos/22/15/221553/4550777_sml.jpg)
CM200DU-24F
Manufacturer Part Number
CM200DU-24F
Description
IGBT MOD DUAL 1200V 200A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet
1.CM200DU-24F.pdf
(4 pages)
Specifications of CM200DU-24F
Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
78nF @ 10V
Power - Max
890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Dc Collector Current
200A
Collector Emitter Voltage Vces
1.2kV
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
No. Of Pins
7
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
835-1083
CM200DU-24F
CM200DU-24F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CM200DU-24F
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM200DU-24F
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM200DU-24F
Quantity:
55
Company:
Part Number:
CM200DU-24F#300G
Manufacturer:
POWEREX
Quantity:
1 000
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes/1200 Volts
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R
R
R
Symbol
Symbol
R
th(j-c)
t
t
th(j-c)
th(j-c)
C
C
C
d(on)
d(off)
th(c-f)
Q
j
t
oes
t
ies
res
t
rr
= 25 C unless otherwise specified
r
f
rr
'Q
Q
D
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
T
c
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chip
V
V
Per IGBT 1/2 Module,
CC
V
Switching Operation
CE
GE1
Inductive Load
Test Conditions
= 600V, I
Test Conditions
= 10V, V
R
I
E
= V
G
= 200A
= 1.6 ,
GE2
C
GE
= 15V,
= 200A,
c
= 0V
c
Reference
Reference
Min.
Min.
–
–
–
–
–
–
–
–
–
–
–
–
–
12.2
Typ.
Typ.
–
–
–
–
–
–
–
–
–
0.08
0.020
300
500
300
200
78
80
Max.
Max.
3.4
2
–
0.15
0.18
–
Units
Units
C/W
C/W
C/W
C/W
ns
ns
ns
ns
ns
nf
nf
nf
C
3