CM200DU-24F Powerex Inc, CM200DU-24F Datasheet - Page 4

• Manufacturer Part Number: CM200DU-24F
• Description: IGBT MOD DUAL 1200V 200A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM200DU-24F

• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 78nF @ 10V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.2kV
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 7
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 835-1083; CM200DU-24F

4
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes/1200 Volts
400
300
200
100
10
10
10
10
10
10
0
3
2
1
3
2
1
10
0
0
REVERSE RECOVERY CHARACTERISTICS
1
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
T
T
V
V
R
T
Inductive Load
j
j
j
CC
GE
G
= 25 C
= 25
= 25 C
FORWARD CHARACTERISTICS
= 1.6
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
= 600V
= 15V
o
1.0
C
1
FREE-WHEEL DIODE
V
GE
= 20V
(TYPICAL)
(TYPICAL)
(TYPICAL)
15
2.0
10
11
2
2
E
, (AMPERES)
8
10
8.5
I
t
rr
rr
3.0
9
9.5
3
CE
EC
, (VOLTS)
, (VOLTS)
4.0
10
4
3
10
10
10
3
2
1
10
10
10
10
20
16
12
-1
8
4
0
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
I
GE
C
GE
COLLECTOR-CURRENT, I
= 200A
500
= 0V
= 15V
T
T
100
j
j
CAPACITANCE VS. V
COLLECTOR-EMITTER
= 25 C
= 125 C
GATE CHARGE, V
GATE CHARGE, Q
1000
10
0
(TYPICAL)
(TYPICAL)
V
CC
1500
200
= 400V
2000
G
C
10
, (nC)
, (AMPERES)
V
GE
CC
1
300
CE
CE
= 600V
2500
C
C
, (VOLTS)
C
oes
res
ies
3000
400
10
2
10
10
10
10
10
10
10
10
10
-1
-2
-3
5
4
3
2
1
0
1
0
3
2
1
0
SATURATION VOLTAGE CHARACTERISTICS
10
10
0
1
t
-3
d(off)
Per Unit Base
R
R
Single Pulse
T
T
C
j
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 25 C
GATE-EMITTER VOLTAGE, V
6
SWITCHING CHARACTERISTICS
t
COLLECTOR CURRENT, I
= 25 C
f
I
10
C
= 0.15 C/W (IGBT)
= 0.18 C/W (FWDi)
TRANSIENT THERMAL
COLLECTOR-EMITTER
8
= 80A
-2
(IGBT & FWDi)
HALF-BRIDGE
I
10 12 14 16
C
(TYPICAL)
(TYPICAL)
= 200A
TIME, (s)
I
10
10
C
10
= 400A
-1
-5
2
C
V
V
R
T
Inductive Load
, (AMPERES)
j
t
CC
GE
G
GE
t
d(on)
r
= 125 C
10
10
, (VOLTS)
= 1.6
= 600V
= 15V
-4
0
18 20
10
10
10
-3
3
1
10
10
10
-1
-2
-3