GA75TS120U Vishay, GA75TS120U Datasheet - Page 2

• Manufacturer Part Number: GA75TS120U
• Description: IGBT FAST 1200V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 12.815nF @ 30V
• Power - Max: 390W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

Dynamic Characteristics - T
Electrical Characteristics @ T
GA75TS120U
Q
Qge
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
di
V
V
V
∆V
g
I
V
I
d(on)
d(off)
f
GES
r
rr
rr
CES
fe
on
off (1)
ts (1)
ies
oes
res
(rec)
2
(BR)CES
CE(on)
GE(th)
FM
g
gc
rr
GE(th)
M
/dt
/∆T
J
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage —
Forward Transconductance ➃
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Parameter
Parameter
b
J
= 125°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
1200
Min. Typ. Max. Units
3.0
—
—
—
—
—
—
—
—
—
—
— 12815 —
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9367
1491
570
189
109
119
392
402
570
110
174
107
107
-11
2.1
1.9
2.3
2.1
96
11
20
31
—
—
—
—
—
854
144
283
250
3.1
6.0
3.3
1.0
—
—
—
—
—
—
45
—
—
—
—
—
—
10
—
—
—
—
—
mV/°C V
A/µs
mA
mJ
nA
nC
nC
pF
ns
ns
V
S
V
A
V
I
T
R
I
V
V
Inductor load
V
V
ƒ = 1 MHz
I
R
R
V
di/dt = 1300A/µs
V
V
V
V
V
V
V
I
I
V
C
C
C
F
F
J
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
GE
GE
GE
CE
CE
CE
GE
GE
GE
= 75A, V
= 75A, V
= 85A
= 75A
= 75A
= 25°C
= 15Ω, R
= 15Ω
= 0Ω
= 400V
= ±15V
= 0V
= 30V
= ±20V
= 0V, I
= 15V, I
= 15V, I
= 6.0V, I
= 6.0V, I
= 25V, I
= 0V, V
= 0V, V
720V
720V
GE
C
GE
CE
CE
C
C
C
Conditions
Conditions
C
C
G2
= 1mA
= 0V, T
= 75A
= 75A
= 75A, T
= 0V
= 750µA
= 750µA
= 1200V
= 1200V, T
= 0Ω,
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J
= 125°C
J
= 125°C
J
= 125°C