GA75TS120U Vishay, GA75TS120U Datasheet - Page 6

• Manufacturer Part Number: GA75TS120U
• Description: IGBT FAST 1200V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 12.815nF @ 30V
• Power - Max: 390W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA75TS120U
1 0 0 0
6
1 0 0
Fig. 13 - Typical Forward Voltage Drop vs.
1 0
70
60
50
40
30
20
10
Fig. 11 - Typical Switching Losses vs.
0
1.0
0

F o rw a rd V o lta ge D ro p - V
R
T
V
V
R
T
CC
GE
G
J
C
G1
Instantaneous Forward Current
Collector-to-Emitter Current
= 125°C
1.4
=15Ω;R
20
= 150 C
= 15V
= 720V
= 15Ohm
I
40
°
1.8
C
G2
, Collector Current (A)
= 0 Ω
60
2.2
T = 1 2 5 °C
T = 2 5 °C
J
J
80
2.6
FM
100
(V )
3.0
120
140
160

Fig. 14 - Typical Stored Charge vs. di
200
150
100
1 6 0 0 0
1 2 0 0 0
50
8 0 0 0
4 0 0 0
0
0
0

V
T
V
5 0 0
GE
CE
J
SAFE OPERATING AREA
Fig. 12 - Reverse Bias SOA
I = 1 50 A
I = 7 5A
I = 37 A
V
F
F
F
200
CE
= 125 C
measured at terminal(Peak Voltage)
= 20V
, Collector-to-Emitter Voltage (V)
o
400
1 0 0 0
d i /dt - (A /µs)
600
f
800
V = 72 0 V
T = 12 5 °C
T = 25 °C
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1 5 0 0
R
J
J
1000
1200
f
/dt
1400
2 0 0 0