VSKTF200-12HJ Vishay, VSKTF200-12HJ Datasheet - Page 3

• Manufacturer Part Number: VSKTF200-12HJ
• Description: SCR DBL 2SCR 1200V 200A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF200-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 444A
• Current - Non Rep. Surge 50, 60hz (itsm): 7600A, 8000A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF200-12HJ; IRKTF200-12HJ; IRKTF200-12HJ

Switching
Thermal and Mechanical Specifications
www.irf.com
Blocking
Triggering
T
T
R
R
T
wt
di/dt
t
t
P
P
I
- V
I
V
I
V
dv/dt
V
I
I
rr
q
RRM
GM
GT
GD
DRM
J
stg
INS
GM
G(AV)
GT
GD
thJC
thC-hs
GM
Parameter
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to
case
Max. thermal resistance, case to
heatsink
Mounting torque ± 10% MAP to heatsink
Approximate weight
Parameter
Parameter
Parameter
Maximum non-repetitive rate of rise
Maximum recovery time
Maximum turn-off time
Maximum critical rate of rise of off-state
voltage
RMS isolation voltage
Maximum peak reverse and off-state
leakage current
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
busbar to MAP
20
4 - 6 (35 - 53)
4 - 6 (35 - 53)
IRK.F200..
K
IRK.F200..
IRK.F200..
IRK.F200..
500 (17.8)
- 40 to 125
- 40 to 150
0.125
0.025
1000
3000
0.25
800
200
50
60
10
10
20
2
5
3
25
J
(lb*in)
g (oz)
Units Conditions
Units Conditions
Units Conditions
Units Conditions
A/µs
V/µs
K/W
K/W
Nm
mA
mA
mA
°C
µs
µs
W
W
V
A
V
V
V
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
Gate drive 20V, 20 , tr
T
I
I
V
T
50 Hz, circuit to base, T
T
f = 50 Hz, d% = 50
T
T
T
T
Per junction, DC operation
Mounting surface flat and greased
Per module
TM
TM
J
R
J
J
J
J
J
J
= 25°C
= 125°C, f = 50Hz, d% = 50
= 125°C, t
= 50V, dv/dt = 400V/µs linear to 80% V
= 125°C., exponential to = 67% V
= 125°C, rated V
= 25°C, V
= 125°C, rated V
= 350A, di/dt = -25A/µs, V
= 750A, T
J
p
ak
Bulletin I27099 rev. C 03/01
= 125°C, di/dt = -25A/µs,
< 5ms
12V, Ra = 6
IRK.F200.. Series
DRM
DRM
/V
applied
J
1ms, V
= 25°C, t = 1 s
RRM
R
= 50V, T
applied
D
= 80% V
DRM
J
= 25°C
DRM
DRM
3