VSKTF200-12HJ Vishay, VSKTF200-12HJ Datasheet - Page 7

• Manufacturer Part Number: VSKTF200-12HJ
• Description: SCR DBL 2SCR 1200V 200A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF200-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 444A
• Current - Non Rep. Surge 50, 60hz (itsm): 7600A, 8000A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF200-12HJ; IRKTF200-12HJ; IRKTF200-12HJ

1E4
1E3
1E2
1E1
1E4
1E3
1E2
www.irf.com
1E1
1E1
320
300
280
260
240
220
200
180
160
140
120
100
80
Fig. 9 - Reverse Recovery Charge Characteristics
Ra te O f Fall O f Fo rw ard C urre nt - d i/dt (A / s)
10
tp
tp
20
IRK.F200.. Series
Tra p ezo id a l p ulse
T = 85 C d i/d t 5 0A/ s
5 00 0
5 00 0
C
30
IRK.F200.. Series
Sinuso id a l p ulse
T
I
TM
2 50 0
C
1E2
1E2
= 85 C
Pulse Base w idth ( s)
Pulse Base w idth ( s)
40
= 1000 A
2 50 0
1 00 0
300 A
200 A
100 A
500 A
50
1 00 0
60
40 0
IRK .F200.. Serie s
T = 125 C
J
40 0
70
1 5 0
1E3
1E3
1 50
80
Snub b er c ircuit
R = 10 o hm s
C = 0.47 F
V
50 H z
Snub b er circuit
R = 10 ohm s
C = 0.47 F
V
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
s
s
D
s
s
D
50 H z
90 100
= 80% V
= 80% V
D R M
D R M
1E4
1E4
1E4
1E4
E1
E1
1E1
1E1
tp
tp
180
150
120
Fig. 10 - Reverse Recovery Current Characteristics
IRK .F200.. Series
Sinuso id a l p ulse
T
90
60
30
5000
Rate O f Fa ll O f Forw ard C urren t - d i/dt (A / s)
IRK .F2 00.. Se rie s
Tra p ezoid a l p ulse
T = 85 C d i/d t 100A/ s
C
5000
10
C
= 60 C
2 50 0
1E2
1E2
Pu lse Base w idth ( s)
20
Pu lse Base w id th ( s)
2 50 0
30
1 00 0
Bulletin I27099 rev. C 03/01
1 00 0
I
TM
40
IRK.F200.. Series
400
= 1 000A
40 0
50
5 00A
3 00A
2 00A
1 00A
1 5 0
1E3
1E3
1 5 0
60
Snub b er circuit
R = 10 ohm s
C = 0.47 F
V
IRK.F200.. Se ries
T = 125 C
J
s
s
D
Snub b e r circ uit
R = 10 ohm s
C = 0.47 F
V
50 H z
70
= 80% V
s
s
D
50 H z
= 80% V
80
D R M
90 100
D R M
1E4
1E4
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