VSKTF200-12HJ Vishay, VSKTF200-12HJ Datasheet - Page 4

• Manufacturer Part Number: VSKTF200-12HJ
• Description: SCR DBL 2SCR 1200V 200A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF200-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 444A
• Current - Non Rep. Surge 50, 60hz (itsm): 7600A, 8000A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF200-12HJ; IRKTF200-12HJ; IRKTF200-12HJ

IRK.F200.. Series
Bulletin I27099 rev. C 03/01
(The following table shows the increment of thermal resistance R
Ordering Information Table
NOTE: To order the Optional Hardware see Bulletin I27900
4
R
Conduction angle
thJC
Conduction
180°
120°
90°
60°
30°
Device Code
Sinusoidal conduction Rectangular conduction
1
2
3
4
5
6
7
- Module type
- Circuit configuration
- Fast SCR
- Current rating: I
- Voltage code: Code x 100 = V
- dv/dt code: H 400V/µs
- t
0.009
0.010
0.014
0.020
0.032
q
code: K 20µs
IRK
1
J 25µs
T
2
T(AV)
F
3
x 10 rounded
thJC
200
0.006
0.011
0.015
0.020
0.033
4
when devices operate at different conduction angles than DC)
RRM
-
(See Voltage Ratings Table)
12
5
Units
K/W
H
6
Conditions
T
J
= 125°C
K
7
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