GP1S52VJ000F Sharp Microelectronics, GP1S52VJ000F Datasheet
GP1S52VJ000F
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GP1S52VJ000F Summary of contents
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... GP1S52VJ000F ■ Description GP1S52VJ000F is a standard, phototransistor output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. For this family of devices, the emitter and detector are insert case, resulting in a through-hole design. ■ Features 1. Transmissive with phototransistor output 2. Highlights : • ...
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... Dimension (d) d ≤ < d ≤ 18 • Reference dimensions Product mass : approx. 0.49g Dip soldering material : Sn−3Ag−0.5Cu 2 Anode 1 Cathode 2 Collector 3 Emitter 4 1 (Unit : mm) B-Bʼ Date code mark (Both side) +0.3 4−0.45 −0.1 (2.54) Tolerance ± 0.1 ± 0.2 2 GP1S52VJ000F Sheet No.: D3-A02501EN ...
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... Month of production A.D. Mark Month 2000 0 1 2001 1 2 2002 2 3 2003 3 4 2004 4 5 2005 5 6 2006 6 7 2007 7 8 2008 8 9 2009 9 10 2010 repeats year cycle Country of origin Japan, Indonesia or Philippines (Indicated on the packing case) Mark GP1S52VJ000F Sheet No.: D3-A02501EN ...
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... Symbol Condition 20mA 0. 20V CEO 5V 20mA 40mA 0.5mA CE(sat 2V 2mA GP1S52VJ000F MIN. TYP. MAX. 1.25 1.4 − − − 1 100 − 0.5 5 − 0.4 − − − = 100 Ω − Sheet No.: D3-A02501EN (T = 25˚C) a Unit V V μ μ s ...
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... Fig.4 Forward Current vs. Forward Voltage 100 10 1 Fig.6 Collector Current vs. Collector-emitter Voltage =25˚ GP1S52VJ000F 0 − Ambient temperature T (˚ =75˚C 25˚C a 0˚C 50˚C −25˚ 0.5 1 1.5 2 2.5 3 Foward voltage V ( =25˚ =50mA F 40mA 30mA 20mA ...
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... CE 0.15 0.05 75 100 (˚C) a Fig.10 Test Circuit for Response Time R D Input 1 10 (kΩ) Fig.12 Collector Dark Current vs = =2mA C T =25˚ 1kΩ 100Ω GP1S52VJ000F I =40mA F I =0.5mA C 0.2 0 −25 Ambient temperature T (˚C) a Input Output Output Ambient Temperature −6 V =20V CE −7 − ...
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... Shield moving distance L (mm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Fig.14 Detecting Position Characteristics (2) = 100 Sensor + 1.5 2 2.5 −3 7 GP1S52VJ000F I =20mA =25˚C a Shield − Sensor −2 − Shield moving distance L (mm) Sheet No ...
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... Case Black NORYL resin 4mm or more Maximum Sensitivity wavelength (nm) 800 Maximum light emitting Material wavelength (nm) Gallium arsenide (GaAs) Lead frame plating Solder dip. (Sn−3Ag−0.5Cu) 8 GP1S52VJ000F Sensitivity Response time (μs) wavelength (nm) 400 to 1 200 3 I/O Frequency (MHz) 950 0.3 Sheet No.: D3-A02501EN ...
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... Some fl ux, which is used in soldering, may crack the package due to synergistic effect of alcohol in fl ux and the rise in temperature by heat in soldering. Therefore, in using fl ux, please make sure that it does not have any infl uence on appearance and reliability of the photointerrupter. 9 GP1S52VJ000F Sheet No.: D3-A02501EN ...
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... Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). 10 GP1S52VJ000F Sheet No.: D3-A02501EN ...
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... Each partition should have 1 plastic bag. The 10 plastic bags containing a product are put in the packing case. Moltopren should be located after all product are settled (1 packing contains 1 000 pcs). Packing composition Partition Anti-static plastic bag Packing case 11 GP1S52VJ000F Moltopren Sheet No.: D3-A02501EN ...
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... SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 12 GP1S52VJ000F Sheet No.: D3-A02501EN ...