GP1S196HCZSF Sharp Microelectronics, GP1S196HCZSF Datasheet - Page 7

• Manufacturer Part Number: GP1S196HCZSF
• Description: SENSOR OPTO SLOT 1.1MM TRANS SMD
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S196HCZSF

• Sensing Distance: 0.043" (1.1mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 30mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 50µs, 50µs
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2510-5

● Parts
• Photodetector (qty. : 1)
• Photo emitter (qty. : 1)
• Material
Phototransistor
This product is assembled using the below parts.
sulfi de resin (UL94 V-0)
Infrared emitting diode
Black polyphernylene
Category
(non-coherent)
Category
Case
Silicon (Si)
Material
Gallium arsenide (GaAs)
Maximum Sensitivity
Material
Lead frame
42Alloy
wavelength (nm)
930
7
Maximum light emitting
wavelength (nm)
Lead frame plating
wavelength (nm)
SnCu plating
700 to 1 200
950
Sensitivity
GP1S196HCZ0F/GP1S196HCZSF
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D3-A01001EN
0.3
20