GP1S53V Sharp Microelectronics, GP1S53V Datasheet - Page 2

• Manufacturer Part Number: GP1S53V
• Description: PHOTOINTERRUPTER SLOT 5.0MM PCB
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S53V

• Sensing Distance: 0.197" (5mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 3µs, 4µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 425-1051-5

Input
Output
Transfer
charac-
teristics
Fig. 1 Forward Current vs. Ambient
Fig. 3 Peak Forward Current vs.
Electro-optical Characteristics
2000
1000
500
200
100
60
50
40
30
20
10
50
20
0
- 25
Temperature
Duty Ratio
5
Forward voltage
Peak forward voltage
Reverse current
Collector dark current
Collector Current
Collector-emitter saturation voltage
Response time
10
- 2
0
Ambient temperature T
Parameter
2
25
Duty ratio
5
Pulse width <= 100 s
T
a
10
= 25˚C
50
- 1
a
2
( ˚C )
Rise time
Fall time
75
85
5
100
10
Symbol
V
0
V
I
CE ( sat )
V
CEO
I
Ic
t
t
R
FM
f
r
F
I
I
V
V
I
I
V
R
F
FM
F
F
CE
L
R
CE
= 20mA
= 20mA, V
= 40mA, I
= 100
= 3V
= 0.5A
= 2V, I
= 20V
Fig. 2 Collector Power Dissipation vs.
Fig. 4 Forward Current vs.
Conditions
C
120
100
500
200
100
= 2mA
80
75
60
40
20
50
20
10
C
CE
- 25
0
5
2
1
Forward Voltage
= 0.2mA
Ambient Temperature
0
= 5V
T
0.5
a
= 75˚C
0
Ambient temperature T
50˚C
Forward voltage V
1
25
MIN.
0.5
1.5
-
-
-
-
-
-
-
2
50
GP1S53V/GP1S58V
1.25
TYP.
F
3
1
3
4
- 25˚C
-
-
-
a
( V )
2.5
25˚C
( ˚C )
0˚C
75
MAX.
3
85
100
1.4
1.5
0.4
10
15
20
( Ta = 25˚C )
4
3.5
100
Unit
mA
nA
V
V
V
A
s
s