GP2S60 Sharp Microelectronics, GP2S60 Datasheet - Page 2

• Manufacturer Part Number: GP2S60
• Description: PHOTOINTERRUPTER REFLEC 1MM SMD
• Manufacturer: Sharp Microelectronics

Specifications of GP2S60

• Sensing Distance: 0.028" (0.7mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 20mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Response Time: 20µs, 20µs
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• No. Of Channels: 1
• Input Current: 20mA
• Output Voltage: 35V
• Opto Case Style: SMD
• No. Of Pins: 4
• Collector Emitter Voltage V(br)ceo: 35V
• Continuous Collector Current Ic Max: 20mA
• External Depth: 1.7mm
• External Length: RoHS Compliant
• Optocoupler Output Type: Phototransistor
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-1097-2

I Electro-optical Characteristics
I Rank Table
Fig.1 Forward Current vs. Ambient
*1 Refer to Fig.11
*2 No Reflective object
Transfer
teristics
Model No.
GP2S60
GP2S60A
GP2S60B
charac-
Output
Input
Temperature
*1
*2
60
50
40
30
20
10
Response time
0
−25
Forward voltage
Reverse current
Collector dark current
Collector current
Leak current
Rank mark
A or B
Parameter
A
B
0
Ambient temperature T
40 to 130
65 to 130
40 to 80
Ic(µA)
25
Rise time
Fall time
50
a
(°C)
Conditions
I
V
Ta=25˚C
75
F
=4mA
CE
Symbol
=2V
I
85
I
LEAK
V
CEO
I
I
t
t
R
C
r
f
F
100
R
V
V
V
L
CE
=1 000Ω, d=1mm
Fig.2 Power Dissipation vs. Ambient
CE
CE
=2V, I
Conditions
=2V, I
=2V, I
I
V
F
V
=20mA
CE
R
=20V
=6V
C
Temperature
=100µA
F
F
=4mA
=4mA
120
100
80
60
40
20
0
−25
P,P
P
tot
C
0
Ambient temperature T
MIN.
40
−
−
−
−
−
−
−
25
TYP.
1.2
50
85
20
20
−
−
1
a
(°C)
MAX.
75
100
100
1.4
100
130
500
10
85
GP2S60
(Ta=25˚C)
100
Unit
µA
µA
nA
nA
µs
µs
V