PIC18F26K22-I/SO Microchip Technology, PIC18F26K22-I/SO Datasheet - Page 438

• Manufacturer Part Number: PIC18F26K22-I/SO
• Description: IC PIC MCU 64KB FLASH 28SOIC
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F26K22-I/SO

• Core Size: 8-Bit
• Program Memory Size: 64KB (32K x 16)
• Core Processor: PIC
• Speed: 64MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 24
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 3.8K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 19x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (0.300", 7.50mm Width)
• Controller Family/series: PIC18
• No. Of I/o's: 25
• Eeprom Memory Size: 1KB
• Ram Memory Size: 3896Byte
• Cpu Speed: 64MHz
• No. Of Timers: 7
• Processor Series: PIC18F
• Core: PIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIC18(L)F2X/4XK22
27.9
DS41412D-page 438
DC CHARACTERISTICS
D170
D171
D172
D173
D174
D175
D176
D177
D178
D179
D180
D181
D182
D183
D184
Note 1:
Param
No.
2:
3:
4:
5:
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
Memory Programming Requirements
V
I
E
V
V
T
T
T
E
V
V
V
V
T
T
DDP
Sym
DEW
RETD
REF
IW
RETD
PP
D
DRW
DRW
P
PR
PR
IW
IW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write instruc-
tions.
Refer to
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Self-write and Block Erase.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
(PIC18LF)
V
(PIC18F)
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
DD
DD
Section 7.8 “Using the Data EEPROM”
for Read/Write (PIC18LF)
for Read/Write (PIC18F)
for Read (PIC18LF)
for Read (PIC18F)
for Row Erase or Write
for Row Erase or Write
Characteristic
PP
/RE3 pin
(2)
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
100K
10K
Min
1.8
1.8
1M
1.8
1.8
2.2
2.2
40
40
—
—
—
8
PP
output. Circuitry to limit the ICD 2 V
for a more detailed discussion on data EEPROM
Typ†
10M
—
—
—
—
—
—
—
—
—
—
—
—
3
2
Max
3.6
5.5
3.6
5.5
3.6
5.5
10
—
—
—
—
—
—
9
4
Units
Year
Year
E/W
E/W
E/W
mA
A
ms
ms
V
V
V
V
V
V
V
 +125°C
 2010 Microchip Technology Inc.
(Note 3), (Note 4)
-40C to +85C
Using EECON to read/
write
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (Note 5)
Provided no other
specifications are violated
PP
voltage must be
Conditions