SI1072X-T1-GE3 Vishay, SI1072X-T1-GE3 Datasheet - Page 3
![MOSFET N-CH 30V SC89](/photos/19/12/191212/4243377_sml.jpg)
SI1072X-T1-GE3
Manufacturer Part Number
SI1072X-T1-GE3
Description
MOSFET N-CH 30V SC89
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI1072X-T1-GE3.pdf
(6 pages)
Specifications of SI1072X-T1-GE3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
93 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8.3nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 15V
Power - Max
236mW
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
1.3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
129mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS (T
Document Number: 73892
S10-2542-Rev. E, 08-Nov-10
0.20
0.15
0.10
0.05
0.00
10
6
5
4
3
2
1
0
8
6
4
2
0
0.0
0
0
I
D
= 1.3 A
1
1
On-Resistance vs. Drain Current
0.5
V
DS
2
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
V
- Total Gate Charge (nC)
GS
I
V
GS
2
D
GS
Gate Charge
- Drain Current (A)
3
= 4.5 V
= 2 V
1
= 10 V thru 5 V
V
3
4
GS
V
= 4 V
DS
1.5
= 15 V
5
V
4
V
GS
DS
A
= 10 V
= 24 V
= 25 °C, unless otherwise noted)
6
V
GS
2.0
5
= 3 V
7
2.5
6
8
400
300
200
100
3.0
2.4
1.8
1.2
0.6
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
Transfer Characteristics Curves vs. Temp.
C
On-Resistance vs. Junction Temperature
rss
- 25
1
6
V
V
GS
T
DS
0
C
J
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
25 °C
C
Capacitance
25
12
= 125 °C
2
C
50
iss
V
I
D
Vishay Siliconix
GS
= 1.3 A
18
= 10 V
3
75
- 55 °C
V
I
D
GS
100
= 1.2 A
Si1072X
www.vishay.com
= 4.5 V
24
4
125
150
30
5
3