SI1072X-T1-GE3 Vishay, SI1072X-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1072X-T1-GE3
• Description: MOSFET N-CH 30V SC89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1072X-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 15V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 129mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Document Number: 73892
S10-2542-Rev. E, 08-Nov-10
0.20
0.15
0.10
0.05
0.00
10
6
5
4
3
2
1
0
8
6
4
2
0
0.0
0
0
I
D
= 1.3 A
1
1
On-Resistance vs. Drain Current
0.5
V
DS
2
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
V
- Total Gate Charge (nC)
GS
I
V
GS
2
D
GS
Gate Charge
- Drain Current (A)
3
= 4.5 V
= 2 V
1
= 10 V thru 5 V
V
3
4
GS
V
= 4 V
DS
1.5
= 15 V
5
V
4
V
GS
DS
A
= 10 V
= 24 V
= 25 °C, unless otherwise noted)
6
V
GS
2.0
5
= 3 V
7
2.5
6
8
400
300
200
100
3.0
2.4
1.8
1.2
0.6
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
Transfer Characteristics Curves vs. Temp.
C
On-Resistance vs. Junction Temperature
rss
- 25
1
6
V
V
GS
T
DS
0
C
J
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
25 °C
C
Capacitance
25
12
= 125 °C
2
C
50
iss
V
I
D
Vishay Siliconix
GS
= 1.3 A
18
= 10 V
3
75
- 55 °C
V
I
D
GS
100
= 1.2 A
Si1072X
www.vishay.com
= 4.5 V
24
4
125
150
30
5
3